Nā mea nānā kiʻi OFC2024

I kēia lā e nānā kākou iā OFC2024nā mea nānā kiʻi, ʻo ia ka nui o GeSi PD/APD, InP SOA-PD, a me UTC-PD.

1. ʻIke ʻo UCDAVIS i kahi resonant nāwaliwali 1315.5nm non-symmetric Fabry-Perotmea nānā kiʻime ka capacitance liʻiliʻi loa, i manaʻo ʻia he 0.08fF. Ke -1V (-2V) ke kuhi, ʻo 0.72 nA (3.40 nA) ka pōʻeleʻele o kēia manawa, a ʻo 0.93a / W (0.96a / W) ka pane. ʻO 2 mW (3 mW) ka mana optical saturated. Hiki iā ia ke kākoʻo i nā hoʻokolohua ʻikepili kiʻekiʻe 38 GHz.
Hōʻike ke kiʻikuhi ma lalo nei i ke ʻano o ka AFP PD, aia me kahi alakaʻi nalu i hui pū ʻia me Ge-on-ʻO ka mea nānā kiʻime kahi alakaʻi nalu SOI-Ge mua e loaʻa ana i ka > 90% ka hoʻopili ʻana i ke ʻano me ka noʻonoʻo ʻana o <10%. ʻO ka hope he Bragg reflector (DBR) i hāʻawi ʻia me ka reflectivity o> 95%. Ma o ka optimized cavity design (round-trip phase matching condition), hiki ke hoʻopau ʻia ka noʻonoʻo ʻana a me ka hoʻouna ʻana o ka resonator AFP, e hopena i ka absorption o ka Ge detector a kokoke i 100%. Ma luna o ka bandwidth 20nm holoʻokoʻa o ka nalu waena, R+T <2% (-17 dB). ʻO ka laula Ge he 0.6µm a ua manaʻo ʻia ka capacitance he 0.08fF.

2, Huazhong University of Science and Technology i hana i kahi germanium silikaphotodiode avalanche, bandwidth >67 GHz, loa'a >6.6. ʻO ka SACMʻIke kiʻi APDUa hana ʻia ke ʻano o ka hui ʻana o ka pipin transverse ma luna o kahi paepae ʻike silika. ʻO ka germanium intrinsic (i-Ge) a me ka silicon intrinsic (i-Si) e lawelawe ma ke ʻano he papa hoʻomoe māmā a me ka papa pālua electron. ʻO ka ʻāina i-Ge me ka lōʻihi o 14µm e hōʻoiaʻiʻo i ka hoʻomāmā māmā ʻana ma 1550nm. ʻO nā wahi liʻiliʻi i-Ge a me i-Si e kūpono i ka hoʻonui ʻana i ke kiʻi kiʻi kiʻi a me ka hoʻonui ʻana i ka bandwidth ma lalo o ka voltage bias kiʻekiʻe. Ua ana ʻia ka palapala maka APD ma -10.6 V. Me ka mana optical input o -14 dBm, ua hōʻike ʻia ka palapala maka o nā hōʻailona OOK 50 Gb/s a me 64 Gb/s OOK ma lalo, a ʻo ka SNR i ana ʻia ʻo 17.8 a me 13.2 dB , pakahi.

3. IHP 8-inihi BiCMOS laina pailaka hōʻike i ka germaniumPD ʻike kiʻime ka laula fin ma kahi o 100 nm, hiki iā ia ke hoʻohua i ke kahua uila kiʻekiʻe loa a me ka manawa hoʻoheheʻe kiʻi kiʻi pōkole loa. Loaʻa iā Ge PD ka bandwidth OE o 265 GHz@2V@ 1.0mA DC photocurrent. Hōʻike ʻia ke kahe kaʻina hana ma lalo nei. ʻO ka hiʻohiʻona nui loa, ʻo ia ka haʻalele ʻana o ka implantation ion i hoʻohui ʻia ma mua, a ua ʻae ʻia ka hoʻolālā etching ulu e pale i ka mana o ka implantation ion ma germanium. ʻO ka pōʻeleʻele o kēia manawa he 100nA, R = 0.45A / W.
4, hōʻike ʻo HHI i ka InP SOA-PD, ʻo ia hoʻi me SSC, MQW-SOA a me ke kiʻi kiʻi wikiwiki kiʻekiʻe. No ka O-band. Loaʻa iā PD ka pane ʻana o 0.57 A/W me ka liʻiliʻi o 1 dB PDL, ʻoiai ʻo SOA-PD he 24 A/W me ka liʻiliʻi o 1 dB PDL. ʻO ka bandwidth o nā mea ʻelua he ~ 60GHz, a ʻo ka ʻokoʻa o 1 GHz hiki ke hoʻopili ʻia i ka resonance frequency o ka SOA. ʻAʻole ʻike ʻia ka hopena kumu ma ke kiʻi maka maoli. Hoʻemi ka SOA-PD i ka mana optical i koi ʻia ma kahi o 13 dB ma 56 GBaud.

5. Hoʻohana ʻo ETH i ka Type II i hoʻomaikaʻi ʻia GaInAsSb/InP UTC-PD, me ka bandwidth o 60GHz@ zero bias a me ka mana kiʻekiʻe o -11 DBM ma 100GHz. ʻO ka hoʻomau ʻana o nā hopena mua, me ka hoʻohana ʻana i nā mana lawe electron i hoʻonui ʻia e GaInAsSb. Ma kēia pepa, ʻo nā papa absorption i hoʻopaʻa ʻia me kahi GaInAsSb i hoʻopaʻa ʻia o 100 nm a me kahi GaInAsSb i hoʻopaʻa ʻole ʻia o 20 nm. Kōkua ka papa NID i ka hoʻomaikaʻi ʻana i ka pane holoʻokoʻa a kōkua pū i ka hōʻemi i ka capacitance holoʻokoʻa o ka hāmeʻa a hoʻomaikaʻi i ka bandwidth. Loaʻa i ka 64µm2 UTC-PD kahi bandwidth zero-bias o 60 GHz, kahi mana hoʻopuka o -11 dBm ma 100 GHz, a me kahi manawa saturation o 5.5 mA. Ma ka hoʻohuli ʻana o 3 V, piʻi ka bandwidth i 110 GHz.

6. Ua ho'okumu 'o Innolight i ke kŘkohu pane alapine o ka germanium silicon photodetector ma muli o ka no'ono'o piha 'ana i ka doping o ka mea hana, ka hā'awi 'ana i ke kahua uila a me ka manawa ho'oili lawe ki'i. Ma muli o ka pono o ka mana hoʻokomo nui a me ka bandwidth kiʻekiʻe i nā noi he nui, ʻo ka hoʻokomo ʻana i ka mana optical nui e hoʻemi i ka bandwidth, ʻo ka hana maikaʻi loa ʻo ka hoʻemi ʻana i ka neʻe ʻana o ka mea lawe i germanium e ka hoʻolālā hoʻolālā.

7, Ua hoʻolālā ʻo ke Kulanui ʻo Tsinghua i ʻekolu ʻano o UTC-PD, (1) 100GHz bandwidth double drift layer (DDL) hoʻolālā me ka mana saturation kiʻekiʻe UTC-PD, (2) 100GHz bandwidth double drift layer (DCL) hale me ka pane kiʻekiʻe UTC-PD , (3) 230 GHZ bandwidth MUTC-PD me ka mana saturation kiʻekiʻe, No nā hiʻohiʻona noiʻi like ʻole, ka mana saturation kiʻekiʻe, ka bandwidth kiʻekiʻe a me ka pane kiʻekiʻe e pono ai i ka wā e hiki mai ana ke komo ʻana i ke au 200G.