ʻO nā holomua hou i nā kiʻi ʻike kiʻi avalanche kiʻekiʻe

Nā holomua hou i lokokiʻekiʻe sensitivity avalanche photodetectors

ʻO ka mahana wela o ka lumi 1550 nmʻike kiʻi kiʻi avalanche

Ma ka hui kokoke infrared (SWIR), hoʻohana nui ʻia nā diodes kiʻekiʻe kiʻekiʻe kiʻekiʻe i ke kamaʻilio optoelectronic a me nā noi liDAR. Eia nō naʻe, ʻo ka photodiode avalanche kokoke-infrared (APD) i hoʻomalu ʻia e Indium gallium arsenic avalanche breakdown diode (InGaAs APD) ua kaupalena mau ʻia e ka leo hoʻoheheʻe ionization o nā mea ʻāina multiplier kuʻuna, indium phosphide (InP) a me indium alumini arsenic (InAlAs), ka hopena o ka hoʻohaʻahaʻa ʻana o ka mea. I nā makahiki he nui nā mea noiʻi he nui eʻimi ana i nā mea hou semiconducor e like me ka megtonectrocess off and ultra-love

ʻO ka mea hou 1550 nm avalanche photodiode detector kōkua i ka hoʻomohala ʻana i nā ʻōnaehana LiDAR

ʻO kahi hui o nā mea noiʻi ma United Kingdom a me ʻAmelika Hui Pū ʻIa no ka manawa mua i hoʻomohala maikaʻi i kahi kiʻi kiʻi kiʻi kiʻi kiʻekiʻe kiʻekiʻe 1550 nm APD (ʻike kiʻi avalanche), kahi holomua e hoʻohiki e hoʻomaikaʻi nui i ka hana o nā ʻōnaehana LiDAR a me nā noi optoelectronic ʻē aʻe.

Hāʻawi nā mea hou i nā pōmaikaʻi nui

ʻO ka mea koʻikoʻi o kēia noiʻi ʻo ia ka hoʻohana ʻana i nā mea hou. Ua koho nā mea noiʻi iā GaAsSb ma ke ʻano he absorption layer a me AlGaAsSb ma ke ʻano he multiplier layer. He ʻokoʻa kēia hoʻolālā mai nā InGaAs/InP kuʻuna a lawe mai i nā pono nui:

1.GaAsSb absorption layer: GaAsSb like me InGaAs, a ʻo ka hoʻololi ʻana mai GaAsSb absorption layer i AlGaAsSb (multiplier layer) ʻoi aku ka maʻalahi, e hōʻemi ana i ka hopena pahele a me ka hoʻomaikaʻi ʻana i ka wikiwiki a me ka pono absorption o ka hāmeʻa.

2. AlGaAsSb multiplier layer: AlGaAsSb multiplier layer i oi aku mamua o ka InP kahiko a me InAlAs multiplier layer i ka hana. Hōʻike nui ʻia i ka loaʻa kiʻekiʻe ma ka lumi wela, ka bandwidth kiʻekiʻe a me ka leo haʻahaʻa haʻahaʻa.

Me nā hōʻailona hana maikaʻi loa

ʻO ka mea houʻIke kiʻi APD(ʻo ka avalanche photodiode detector) hāʻawi pū i nā hoʻomaikaʻi koʻikoʻi i nā ana hana:

1. Loaʻa kiʻekiʻe loa: Ua loaʻa ka loaʻa kiʻekiʻe loa o 278 ma ka lumi wela, a i kēia manawa ua hoʻomaikaʻi ʻo Dr. Jin Xiao i ka hoʻolālā ʻana a me ke kaʻina hana, a ua hoʻonui ʻia ka loaʻa kiʻekiʻe i M=1212.

2. Haʻahaʻa haʻahaʻa loa: hōʻike haʻahaʻa haʻahaʻa haʻahaʻa loa (F <3, loaʻa M = 70; F<4, loaʻa M=100).

3. ʻO ke kūlana kiʻekiʻe kiʻekiʻe: ma lalo o ka loaʻa kiʻekiʻe loa, ʻoi aku ka kiʻekiʻe o ka quantum e like me 5935.3%. ʻO ke kūpaʻa wela ikaika: ʻo ka haʻahaʻa haʻahaʻa ma kahi o 11.83 mV/K.

Fig 1 Ka walaau nui o APDnā mea ʻike kiʻihoʻohālikelike ʻia me nā mea ʻike kiʻi APD ʻē aʻe

Nā manaʻo noiʻi ākea

He mau mea koʻikoʻi ko kēia APD hou no nā ʻōnaehana liDAR a me nā noi photon:

1. Hoʻomaikaʻi i ka lākiō hōʻailona-noise: ʻO ka loaʻa kiʻekiʻe a me nā hiʻohiʻona haʻahaʻa haʻahaʻa e hoʻomaikaʻi nui i ka ratio signal-to-noise, he mea koʻikoʻi no nā noi ma nā wahi ʻilihune photon, e like me ka nānā ʻana i ke kinoea greenhouse.

2. Paʻa ikaika: Ua hoʻolālā ʻia ka photodetector APD hou (avalanche photodetector) e kūpono me nā indium phosphide (InP) optoelectronics platforms o kēia manawa, e hōʻoia ana i ka hoʻohui pono ʻana me nā ʻōnaehana kamaʻilio kalepa.

3. ʻO ka maikaʻi o ka hana kiʻekiʻe: Hiki iā ia ke hana maikaʻi ma ka lumi wela me ka ʻole o nā mīkini hoʻoluʻu paʻakikī, e hoʻomaʻamaʻa maʻalahi i ka hoʻopili ʻana i nā noi hana like ʻole.

ʻO ka hoʻomohala ʻana o kēia mea hou 1550 nm SACM APD photodetector (avalanche photodetector) e hōʻike ana i kahi holomua nui ma ke kula, Hoʻopuka i nā palena kī e pili ana i ka walaʻau nui a loaʻa nā huahana bandwidth i nā hoʻolālā APD photodetector (avalanche photodetector). Manaʻo ʻia kēia mea hou e hoʻoikaika i nā mana o nā ʻōnaehana liDAR, ʻoi aku hoʻi i nā ʻōnaehana liDAR unmanned, a me nā kamaʻilio manuahi.