Koho o ke kumu laser kūpono: ʻĀpana ʻelua o ka Edge Emission Semiconductor Laser

Koho o ke KūponoPuna LaserHoʻokuʻu ʻana o ka lihiLaser SemiconductorMāhele ʻElua

4. Ke kūlana noi o nā lasers semiconductor edge-emission
Ma muli o kona laulā ākea o ka nalu a me ka mana kiʻekiʻe, ua hoʻopili pono ʻia nā lasers semiconductor edge-emitting ma nā ʻano he nui e like me ke kaʻa, ke kamaʻilio optical a melaserlapaʻau. Wahi a Yole Developpement, kahi keʻena noiʻi mākeke kaulana o ka honua, e ulu ka mākeke laser edge-to-emit i $7.4 biliona i ka makahiki 2027, me ka nui o ka ulu makahiki hui o 13%. E hoʻomau ʻia kēia ulu ʻana e nā kamaʻilio optical, e like me nā modula optical, nā amplifiers, a me nā noi ʻike 3D no ke kamaʻilio ʻikepili a me nā kelepona. No nā koi noi like ʻole, ua hoʻomohala ʻia nā papahana hoʻolālā hoʻonohonoho EEL like ʻole i ka ʻoihana, me: nā lasers semiconductor Fabripero (FP), nā lasers semiconductor Distributed Bragg Reflector (DBR), nā lasers semiconductor external cavity laser (ECL), nā lasers semiconductor feedback distributed (Kukuna DFB), nā lasers semiconductor cascade quantum (QCL), a me nā diodes laser wahi ākea (BALD).

Me ka piʻi ʻana o ke koi no ke kamaʻilio optical, nā noi ʻike 3D a me nā kahua ʻē aʻe, ke piʻi nei ke koi no nā lasers semiconductor. Eia kekahi, ʻo nā lasers semiconductor edge-emitting a me nā lasers semiconductor surface-emitting vertical-cavity e pāʻani pū i kahi kuleana i ka hoʻopiha ʻana i nā hemahema o kekahi i kekahi i nā noi e kū mai ana, e like me:
(1) Ma ke kahua o ke kamaʻilio optical, ʻo ka 1550 nm InGaAsP/InP Distributed Feedback ((DFB laser) EEL a me 1300 nm InGaAsP/InGaP Fabry Pero EEL e hoʻohana pinepine ʻia ma nā mamao hoʻoili o 2 km a 40 km a me nā helu hoʻoili a hiki i 40 Gbps. Eia nō naʻe, ma 60 m a 300 m mamao hoʻoili a me nā wikiwiki hoʻoili haʻahaʻa, ʻo VCsels e pili ana i 850 nm InGaAs a me AlGaAs ka mea nui.
(2) Loaʻa i nā lasers hoʻopuka ʻilikai vertical nā pono o ka liʻiliʻi a me ka nalu haiki, no laila ua hoʻohana nui ʻia lākou ma ka mākeke uila mea kūʻai aku, a ʻo nā pono o ka mālamalama a me ka mana o nā lasers semiconductor e hoʻopuka ana i ka lihi e hoʻomākaukau i ke ala no nā noi ʻike mamao a me ka hana mana kiʻekiʻe.
(3) Hiki ke hoʻohana ʻia nā lasers semiconductor edge-emitting a me nā lasers semiconductor vertical cavity-emitting surface no ka liDAR pōkole a me ka waena-range e hoʻokō i nā noi kikoʻī e like me ka ʻike ʻana i nā wahi makapō a me ka haʻalele ʻana o ke ala.

5. Ka hoʻomohala ʻana i ka wā e hiki mai ana
Loaʻa i ka laser semiconductor edge emitting nā pono o ka hilinaʻi kiʻekiʻe, ka miniaturization a me ka nui o ka mana luminous kiʻekiʻe, a he mau manaʻolana ākea ka hoʻohana ʻana i ke kamaʻilio optical, liDAR, lāʻau lapaʻau a me nā ʻoihana ʻē aʻe. Eia nō naʻe, ʻoiai ua oʻo loa ke kaʻina hana o nā lasers semiconductor edge-emitting, i mea e hoʻokō ai i ka ulu ʻana o ke koi o nā mākeke ʻoihana a me nā mea kūʻai aku no nā lasers semiconductor edge-emitting, pono e hoʻomau i ka hoʻomaikaʻi ʻana i ka ʻenehana, ke kaʻina hana, ka hana a me nā ʻano ʻē aʻe o nā lasers semiconductor edge-emitting, me: ka hoʻemi ʻana i ka nui o nā hemahema i loko o ka wafer; Hoʻemi i nā kaʻina hana; Hoʻomohala i nā ʻenehana hou e pani i nā kaʻina hana ʻokiʻoki wafer blade a me nā huila kuʻuna e hiki ke hoʻolauna i nā hemahema; Hoʻonui i ka ʻano epitaxial e hoʻomaikaʻi i ka pono o ka laser edge-emitting; Hoʻemi i nā kumukūʻai hana, a pēlā aku. Eia kekahi, no ka mea aia ka mālamalama puka o ka laser edge-emitting ma ka ʻaoʻao o ka chip laser semiconductor, he paʻakikī ke hoʻokō i ka hoʻopili ʻana o ka chip liʻiliʻi, no laila pono e uhaʻi hou ʻia ke kaʻina hana hoʻopili e pili ana.