Ke Koho o ke Kumu Laser Pono: Edge Emission Semiconductor Laser Part Two

Koho PonoPuna Laser: Hoʻokuʻu EdgeSemiconductor LaserMahele ʻElua

4. Ke kūlana noi o nā lasers semiconductor edge-emission
Ma muli o kona ākea ākea a me ka mana kiʻekiʻe, ua hoʻohana maikaʻi ʻia nā lasers semiconductor edge-emitting i nā kula he nui e like me ka automotive, kamaʻilio optical a melaserlāʻau lapaʻau. Wahi a Yole Developpement, kahi hui noiʻi mākeke kaulana i ka honua, e ulu ana ka mākeke laser edge-to-emit i $ 7.4 biliona ma 2027, me ka nui o ka ulu ʻana o ka makahiki he 13%. E hoʻomau ʻia kēia ulu ʻana e nā kamaʻilio optical, e like me nā modules optical, amplifier, a me nā noi 3D sensing no nā kamaʻilio ʻikepili a me ke kelepona. No nā koi noi like ʻole, ua hoʻomohala ʻia nā ʻōnaehana hoʻolālā hoʻolālā EEL like ʻole i ka ʻoihana, e like me: Fabripero (FP) semiconductor lasers, Distributed Bragg Reflector (DBR) semiconductor lasers, external cavity laser (ECL) semiconductor lasers, distributed feedback semiconductor lasers (DFB laser), quantum cascade semiconductor lasers (QCL), a wide area laser diodes (BALD).

Me ka piʻi nui ʻana o ka noi no ka kamaʻilio optical, 3D sensing applications a me nā māla ʻē aʻe, ke hoʻonui nei ka koi no nā laser semiconductor. Eia kekahi, hoʻokani nā lasers semiconductor edge-emitting a me vertical-cavity surface-emitting semiconductor lasers i ka hoʻopiha ʻana i nā hemahema o kēlā me kēia i nā noi e puka mai ana, e like me:
(1) Ma ke kahua o nā kamaʻilio optical, hoʻohana mau ʻia ka 1550 nm InGaAsP/InP Distributed Feedback ((DFB laser) EEL a me 1300 nm InGaAsP/InGaP Fabry Pero EEL ma nā mamao hoʻouna o 2 km a 40 km a me nā helu hoʻouna a hiki i ka 40 Gbps Eia naʻe, ma 60 m a 300 m ka mamao o ka hoʻouna ʻana a me ka wikiwiki o ka hoʻouna ʻana, ʻo VCsels e pili ana i 850 nm InGaA a me AlGaA.
(2) Loaʻa i nā lasers e hoʻokuʻu ʻia i ka ʻaoʻao o ka lua i ka liʻiliʻi a me ka lōʻihi haiki, no laila ua hoʻohana nui ʻia lākou i ka mākeke uila mea kūʻai aku, a ʻo ka ʻālohilohi a me ka mana o ka edge emitting semiconductor lasers e wehe i ke ala no nā noi ʻike mamao a hana mana kiʻekiʻe.
(3) Hiki ke hoʻohana ʻia nā lasers semiconductor edge-emitting a me vertical cavity surface-emitting semiconductor lasers no ka liDAR pōkole - a me ka waena waena e hoʻokō i nā noi kikoʻī e like me ka ʻike makapō a me ka haʻalele ʻana.

5. Hoʻomohala e hiki mai ana
Loaʻa i ka edge emitting semiconductor laser nā mea maikaʻi o ka hilinaʻi kiʻekiʻe, ka miniaturization a me ke kiʻekiʻe o ka mana luminous, a loaʻa nā manaʻo noiʻi ākea i ka kamaʻilio optical, liDAR, ke olakino a me nā ʻano ʻē aʻe. Eia nō naʻe, ʻoiai ʻo ke kaʻina hana o ka edge-emitting semiconductor lasers ua ʻano oʻo, i mea e hoʻokō ai i ka ulu ʻana o ka noi o nā mākeke ʻoihana a me nā mea kūʻai aku no nā lasers semiconductor edge-emitting, pono e hoʻomau i ka ʻenehana, kaʻina hana, hana a me nā mea ʻē aʻe. nā hiʻohiʻona o nā laser semiconductor edge-emitting, e like me: ka hoʻemi ʻana i ka nui o nā hemahema i loko o ka wafer; E ho'ēmi i nā kaʻina hana; E hoʻomohala i nā ʻenehana hou e hoʻololi i ka huila wili kuʻuna a me nā kaʻina ʻoki wafer blade i hiki ke hoʻokomo i nā hemahema; E hoʻonui i ka hana epitaxial e hoʻomaikaʻi i ka pono o ka laser edge-emitting; E ho'ēmi i nā kumukūʻai hana, a me nā mea'ē aʻe, no ka mea, aia ke kukui puka o ka laser edge-emitting ma ka ʻaoʻao o ka chip laser semiconductor, he paʻakikī ke hoʻokō i ka puʻupuʻu liʻiliʻi liʻiliʻi, no laila pono ke kaʻina hana hoʻopili pili. naha hou aku.