Kiʻekiʻe-hana kiʻi paʻi kiʻi kiʻi infrared

Kiʻekiʻe-hana hoʻokele ponoʻīmea nānā kiʻi infrared

infraredmea nānā kiʻiLoaʻa nā hiʻohiʻona o ka mana anti-interference ikaika, hiki ke hoʻomaopopo i ka pahu hopu, ka hana o ka wā āpau a me ka hūnā maikaʻi. Ke pāʻani nei ia i kahi hana koʻikoʻi ma nā kula e like me ka lāʻau lapaʻau, ka pūʻali koa, ka ʻenehana ākea a me ka ʻenekinia kaiapuni. I waena o lākou, ka hoʻokele ponoʻīʻike kiʻi uilaʻO ka puʻupuʻu hiki ke hana kūʻokoʻa me ka ʻole o kahi lako mana hou o waho ua huki nui i ka nānā ʻana i ke kahua o ka ʻike infrared ma muli o kāna hana kūʻokoʻa (e like me ke kūʻokoʻa o ka ikehu, ka naʻau kiʻekiʻe a me ke kūpaʻa, etc.). ʻO ka ʻokoʻa, ʻo nā ʻāpana ʻike kiʻi kiʻi kuʻuna, e like me ka silicon-based a i ʻole narrowbandgap semiconductor-based infrared chips, ʻaʻole wale e koi i nā volt bias hou e hoʻokuʻu i ka hoʻokaʻawale ʻana o nā mea lawe kiʻi kiʻi e hana i nā photocurrents, akā pono pū kekahi i nā ʻōnaehana hoʻomaha hou e hōʻemi i ka walaʻau wela a hoʻomaikaʻi i ka pane. No laila, ua lilo i mea paʻakikī e hoʻokō i nā manaʻo hou a me nā koi o ka hanauna e hiki mai ana o nā ʻāpana ʻike infrared i ka wā e hiki mai ana, e like me ka hoʻohana haʻahaʻa haʻahaʻa, ka liʻiliʻi liʻiliʻi, ke kumu kūʻai haʻahaʻa a me ka hana kiʻekiʻe.

I kēia mau lā, ua noi aku nā hui noiʻi mai Kina a me Suedena i kahi moʻolelo pin heterojunction self-driven short-wave infrared (SWIR). Ma lalo o ka hopena hui o ka hopena gating optical i hoʻoulu ʻia e ka heterogeneous interface a me ke kahua uila i kūkulu ʻia, ua hōʻike ka chip i ka pane kiʻekiʻe kiʻekiʻe a me ka hana ʻike ʻana i ka ʻike ʻole ʻana. He 75.3 A/W ka pane ʻike kiʻekiʻe ma ke ʻano hoʻokele ponoʻī, ka helu ʻike o 7.5 × 10¹⁴ Jones, a me kahi kūpono quantum waho kokoke i 104%, e hoʻomaikaʻi ana i ka hana ʻike ʻana o ke ʻano like o nā chips-based chip ma kahi moʻolelo 7 kauoha o ka nui. Eia kekahi, ma lalo o ke ʻano hoʻokele maʻamau, ʻoi aku ka kiʻekiʻe o ka pane o ka chip, ka helu ʻike, a me ka pono quantum waho e like me 843 A/W, 10¹⁵ Jones, a me 105% pakahi, ʻo ia nā mea kiʻekiʻe loa i hōʻike ʻia i ka noiʻi o kēia manawa. I kēia manawa, ua hōʻike pū kēia noiʻi i ka noi honua maoli o ka chip detection photoelectric ma ke kahua o ka kamaʻilio optical a me ke kiʻi infrared, e hōʻike ana i kona hiki ke noi nui.

I mea e aʻo systematically i ka photoelectric hana o ka photodetector e pili ana i graphene nanoribbons /Al₂O₃/ hoʻokahi kilika aniani, noiʻi ho'āʻo i kona static (current-voltage curve) a me dynamic ano pane (current-time curve). No ka loiloi systematically i nā hiʻohiʻona pane optical o ka graphene nanoribbon /Al₂O₃/monocrystalline silicon heterostructure photodetector ma lalo o nā volt bias like ʻole, ua ana nā mea noiʻi i ka pane o kēia manawa o ka hāmeʻa ma 0 V, -1 V, -3 V a me -5 V biases, me ka mana optical density o 8.15 μW/cm². Hoʻonui ka photocurrent me ka hoʻohuli ʻana a hōʻike i ka wikiwiki pane wikiwiki i nā voltage bias āpau.

ʻO ka mea hope loa, ua hana ka poʻe noiʻi i kahi ʻōnaehana kiʻi kiʻi a loaʻa maikaʻi i ke kiʻi kiʻi ponoʻī o ka infrared hawewe pōkole. Ke holo nei ka ʻōnaehana ma lalo o ka bias zero a ʻaʻohe ona ikehu. Ua loiloi ʻia ka hiki ke kiʻi kiʻi o ka photodetector me ka hoʻohana ʻana i kahi mask ʻeleʻele me ke ʻano huaʻōlelo "T" (e like me ka hōʻike ʻana ma ka Figure 1).

I ka hopena, ua hana maikaʻi kēia noiʻi i nā photodetectors ponoʻī e pili ana i nā graphene nanoribbons a loaʻa i kahi helu pane kiʻekiʻe. I kēia manawa, ua hōʻike maikaʻi ka poʻe noiʻi i ka kamaʻilio optical a me nā mana kiʻi o kēiakiʻi kiʻi pane nui. ʻAʻole wale kēia hana noiʻi e hāʻawi i kahi ala kūpono no ka hoʻomohala ʻana i nā nanoribbons graphene a me nā mea hana optoelectronic ma muli o ke silika, akā hōʻike pū i kā lākou hana maikaʻi loa ma ke ʻano he mau mea nānā kiʻi kiʻi infrared pōkole.