Hoʻokomo ʻia nā mea nānā kiʻi wikiwiki kiʻekiʻe e InGaAs photodetectors

Hoʻokomo ʻia nā photodetectors kiʻekiʻe eNā mea nānā kiʻi InGaAs

Kiʻi kiʻi kiʻi wikiwikii loko o ke kahua o ka optical kamaʻilio nui loa i III-V InGaAs photodetectors a me IV piha Si a me Ge /ʻO nā mea nānā kiʻi. ʻO ka mea mua he mea maʻamau kokoke i ka infrared detector, kahi i mana nui no ka manawa lōʻihi, ʻoiai ke hilinaʻi nei ka mea hope i ka ʻenehana optical silicon e lilo i hōkū e piʻi ana, a he wahi wela ia ma ke kahua o ka noiʻi optoelectronics honua i nā makahiki i hala. Eia kekahi, ke ulu wikiwiki nei nā mea ʻike hou e pili ana i ka perovskite, organik a me nā mea ʻelua-dimensional ma muli o nā pono o ka hana maʻalahi, ka maʻalahi a me nā waiwai tunable. Nui nā ʻokoʻa ma waena o kēia mau mea ʻike hou a me nā photodetectors inorganic kuʻuna i nā waiwai waiwai a me nā kaʻina hana. Loaʻa i nā mea ʻike Perovskite nā hiʻohiʻona hoʻomaʻamaʻa māmā maikaʻi a me ka hiki ke hoʻoili ʻia ka uku, ua hoʻohana nui ʻia nā mea ʻike mea kūlohelohe no kā lākou haʻahaʻa haʻahaʻa a me nā electrons maʻalahi, a ua ʻike nui ʻia nā mea ʻike ʻelua-dimensional ma muli o ko lākou mau waiwai kino kūʻokoʻa a me ka mobility kiʻekiʻe. Eia nō naʻe, ke hoʻohālikelike ʻia me InGaAs a me Si/Ge detectors, pono e hoʻomaikaʻi ʻia nā mea ʻike hou ma ke ʻano o ke kūpaʻa lōʻihi, ka hana ʻana a me ka hoʻohui.

ʻO InGaAs kekahi o nā mea kūpono no ka hoʻomaopopo ʻana i ka wikiwiki kiʻekiʻe a me nā kiʻi kiʻi pane kiʻekiʻe. ʻO ka mea mua, ʻo InGaAs kahi mea semiconductor bandgap pololei, a hiki ke hoʻoponopono ʻia kona laulā bandgap e ka ratio ma waena o In a me Ga e hoʻokō ai i ka ʻike ʻana i nā hōʻailona optical o nā hawewe like ʻole. I waena o lākou, In0.53Ga0.47As ua hoʻohālikelike pono ʻia me ka lattice substrate o InP, a loaʻa iā ia ka coefficient absorption māmā nui i ka hui kamaʻilio optical, ʻo ia ka mea i hoʻohana nui ʻia i ka hoʻomākaukau ʻana onā mea nānā kiʻi, a ʻo ka pōʻeleʻele o kēia manawa a me ka hana pane ʻana ʻo ia ka mea maikaʻi loa. ʻO ka lua, loaʻa i nā mea InGaAs a me InP ke kiʻekiʻe electron drift velocity, a ʻo kā lākou saturated electron drift velocity ma kahi o 1 × 107 cm/s. I ka manawa like, loaʻa i nā mea InGaAs a me InP ka hopena o ka wikiwiki o ka electron velocity ma lalo o ke kahua uila. Hiki ke hoʻokaʻawale ʻia ka velocity overshoot i 4 × 107cm / s a ​​me 6 × 107cm / s, kahi mea kūpono i ka ʻike ʻana i kahi bandwidth palena palena manawa. I kēia manawa, ʻo InGaAs photodetector ka mea kiʻi kiʻi nui loa no ka kamaʻilio optical, a ʻo ke ʻano o ka hui ʻana o ka honua i hoʻohana nui ʻia ma ka mākeke, a ua ʻike ʻia nā huahana 25 Gbaud / s a ​​me 56 Gbaud / s surface incidence detector. ʻO ka liʻiliʻi liʻiliʻi, ka hopena hope a me ka nui o ka bandwidth surface incidence detectors i hoʻomohala ʻia, i kūpono no ka wikiwiki kiʻekiʻe a me nā noi saturation kiʻekiʻe. Eia nō naʻe, ua kaupalena ʻia ka ʻimi ʻana o ka ʻili e kona ʻano hoʻohui a paʻakikī ke hoʻohui pū me nā mea hana optoelectronic ʻē aʻe. No laila, me ka hoʻomaikaʻi ʻana i nā koi o ka hoʻohui optoelectronic, ua lilo ka nalu nalu i hui pū ʻia me InGaAs photodetectors me ka maikaʻi o ka hana a kūpono no ka hoʻohui ʻana i mea nui o ka noiʻi, ma waena o nā mea kūʻai aku ʻo 70 GHz a me 110 GHz InGaAs photoprobe modules e hoʻohana i nā hale i hui pū ʻia. E like me nā mea substrate like ʻole, hiki ke hoʻokaʻawale ʻia ka nalu nalu e hui pū ana me InGaAs photoelectric probe i ʻelua mau ʻāpana: InP a me Si. ʻO ka mea epitaxial ma InP substrate he kiʻekiʻe kiʻekiʻe a ʻoi aku ka kūpono no ka hoʻomākaukau ʻana i nā mea hana kiʻekiʻe. Eia nō naʻe, ʻo nā ʻano like ʻole ma waena o nā mea III-V, nā mea InGaAs a me nā substrates Si i ulu a i hoʻopaʻa ʻia paha ma nā substrates Si e alakaʻi i ka maikaʻi ʻole a i ʻole ka maikaʻi o ka interface, a ʻo ka hana o ka hāmeʻa he lumi nui no ka hoʻomaikaʻi ʻana.