Ua hoʻolauna ʻia nā photodetectors wikiwiki e nā photodetectors InGaAs

Hoʻolauna ʻia nā mea ʻike kiʻi wikiwiki eNā mea ʻike kiʻi InGaAs

Nā mea ʻike kiʻi wikiwikima ke kahua o ke kamaʻilio optical e komo pū me nā photodetectors III-V InGaAs a me IV piha Si a me Ge/Nā mea ʻike kiʻi SiʻO ka mea mua he mea ʻike infrared kokoke kuʻuna, kahi i noho aliʻi no ka manawa lōʻihi, ʻoiai ʻo ka mea hope e hilinaʻi nei i ka ʻenehana optical silicon e lilo i hōkū piʻi, a he wahi wela ia ma ke kahua o ka noiʻi optoelectronics honua i nā makahiki i hala iho nei. Eia kekahi, ke ulu wikiwiki nei nā mea ʻike hou e pili ana i nā mea perovskite, organic a me nā mea ʻelua-dimensional ma muli o nā pono o ka hana maʻalahi, ka maʻalahi maikaʻi a me nā waiwai hiki ke hoʻololi ʻia. Aia nā ʻokoʻa koʻikoʻi ma waena o kēia mau mea ʻike hou a me nā photodetectors inorganic kuʻuna i nā waiwai mea a me nā kaʻina hana hana. Loaʻa i nā mea ʻike Perovskite nā ʻano omo mālamalama maikaʻi loa a me ka hiki ke lawe i ka uku kūpono, hoʻohana nui ʻia nā mea ʻike mea organik no ko lākou kumukūʻai haʻahaʻa a me nā electrons maʻalahi, a ua huki nui nā mea ʻike mea ʻelua-dimensional i ka nānā ma muli o ko lākou mau waiwai kino kū hoʻokahi a me ka neʻe ʻana o ka mea lawe kiʻekiʻe. Eia nō naʻe, i hoʻohālikelike ʻia me nā mea ʻike InGaAs a me Si/Ge, pono e hoʻomaikaʻi ʻia nā mea ʻike hou ma ke ʻano o ka paʻa lōʻihi, ka oʻo ʻana o ka hana a me ka hoʻohui ʻana.

ʻO InGaAs kekahi o nā mea kūpono no ka hoʻokō ʻana i nā photodetectors wikiwiki a me ka pane kiʻekiʻe. ʻO ka mea mua, ʻo InGaAs kahi mea semiconductor bandgap pololei, a hiki ke hoʻoponopono ʻia kona laulā bandgap e ka ratio ma waena o In a me Ga e hoʻokō ai i ka ʻike ʻana i nā hōʻailona optical o nā nalu like ʻole. I waena o lākou, ua kūlike loa ʻo In0.53Ga0.47As me ka substrate lattice o InP, a he nui ka coefficient absorption light i loko o ke kāʻei kamaʻilio optical, ʻo ia ka mea i hoʻohana nui ʻia i ka hoʻomākaukau ʻana onā mea nānā kiʻi, a ʻo ke au pōʻeleʻele a me ka hana pane ʻana kekahi mea maikaʻi loa. ʻO ka lua, he kiʻekiʻe ka wikiwiki o ka electron drift o nā mea InGaAs a me InP, a ʻo ko lākou wikiwiki electron drift saturated ma kahi o 1 × 107 cm / s. I ka manawa like, loaʻa i nā mea InGaAs a me InP ka hopena overshoot o ka electron velocity ma lalo o ke kahua uila kikoʻī. Hiki ke hoʻokaʻawale ʻia ka wikiwiki overshoot i 4 × 107cm / s a ​​me 6 × 107cm / s, kahi mea e kūpono ai i ka hoʻokō ʻana i kahi bandwidth manawa palena nui o ka mea lawe. I kēia manawa, ʻo InGaAs photodetector ka photodetector kaulana loa no ke kamaʻilio optical, a ʻo ke ʻano hoʻopili ʻana o ka incidence surface ka mea i hoʻohana nui ʻia ma ka mākeke, a ua ʻike ʻia nā huahana detector incidence surface 25 Gbaud / s a ​​me 56 Gbaud / s. Ua hoʻomohala ʻia hoʻi nā mea ʻike incidence surface liʻiliʻi, back incidence a me ka bandwidth nui, kahi kūpono no nā noi wikiwiki a me ke kiʻekiʻe saturation. Eia nō naʻe, ua kaupalena ʻia ka probe incidence surface e kona ʻano hoʻopili a he paʻakikī ke hoʻohui me nā mea hana optoelectronic ʻē aʻe. No laila, me ka hoʻomaikaʻi ʻana i nā koi hoʻohui optoelectronic, ua lilo mālie nā photodetectors InGaAs i hoʻopili ʻia me ka waveguide me ka hana maikaʻi loa a kūpono no ka hoʻohui ʻana i mea nui o ka noiʻi, ma waena o ia mau mea ʻo nā modula photoprobe InGaAs kalepa 70 GHz a me 110 GHz e hoʻohana ana i nā ʻano waveguide i hoʻopili ʻia. Wahi a nā mea substrate like ʻole, hiki ke hoʻokaʻawale ʻia ka probe photoelectric waveguide coupling InGaAs i ʻelua mau ʻāpana: InP a me Si. He kiʻekiʻe ke ʻano o ka mea epitaxial ma ka substrate InP a ʻoi aku ka kūpono no ka hoʻomākaukau ʻana i nā mea hana kiʻekiʻe. Eia nō naʻe, ʻo nā ʻano like ʻole ma waena o nā mea III-V, nā mea InGaAs a me nā substrates Si i ulu ʻia a hoʻopaʻa ʻia paha ma nā substrates Si e alakaʻi i ka maikaʻi ʻole o ka mea a i ʻole ka interface, a he nui ka lumi no ka hoʻomaikaʻi ʻana i ka hana o ka hāmeʻa.