E hoʻolauna i ka mea nānā kiʻi InGaAs

HoʻolaunaʻO InGaAs photodetector

 

ʻO InGaAs kekahi o nā mea kūpono no ka loaʻa ʻana o ka pane kiʻekiʻe akiʻi kiʻi wikiwiki wikiwiki. ʻO ka mea mua, ʻo InGaAs kahi mea semiconductor bandgap pololei, a hiki ke hoʻoponopono ʻia kona laulā bandgap e ka ratio ma waena o In a me Ga, e hiki ai ke ʻike i nā hōʻailona optical o nā hawewe like ʻole. Ma waena o lākou, In0.53Ga0.47As ua hoʻohālikelike pono ʻia me ka InP substrate lattice a loaʻa iā ia ka coefficient absorption māmā kiʻekiʻe loa i ka hui kamaʻilio optical. ʻO ia ka mea i hoʻohana nui ʻia i ka hoʻomākaukau ʻana omea nānā kiʻia loaʻa nō hoʻi ka hana ʻeleʻele maikaʻi loa a me ka hana responsivity. ʻO ka lua, ʻo nā mea InGaAs a me InP he kiʻekiʻe ka wikiwiki o ka electron drift velocities, me kā lākou saturated electron drift velocities ma kahi o 1 × 107cm/s. I kēia manawa, ma lalo o nā māla uila, hōʻike nā mea InGaAs a me InP i nā hopena overshoot electron velocity, me kā lākou overshoot velocities hiki i 4 × 107cm / s a ​​me 6 × 107cm / s. He kūpono ia i ka loaʻa ʻana o ka bandwidth crossing kiʻekiʻe. I kēia manawa, ʻo InGaAs photodetectors ka mea kiʻi kiʻi nui loa no ka kamaʻilio optical. Ma ka mākeke, ʻo ke ʻano o ka hui ʻana o ka surface-inside ka mea maʻamau. Hiki ke hana nui ʻia nā huahana ʻike maka me 25 Gaud/s a me 56 Gaud/s. ʻOi aku ka liʻiliʻi liʻiliʻi, hope-incident, a kiʻekiʻe-bandwidth ili-incident detectors ua hoʻomohala ʻia, nui no nā noi e like me ka wikiwiki kiʻekiʻe a me ka saturation kiʻekiʻe. Eia nō naʻe, ma muli o nā palena o kā lākou hui ʻana, paʻakikī nā mea ʻike hanana i ka honua e hoʻohui me nā mea hana optoelectronic ʻē aʻe. No laila, me ka piʻi nui ʻana o ka noi no ka hoʻohui optoelectronic, ua hoʻohui ʻia ka nalu nalu i hui pū ʻia me InGaAs photodetectors me ka hana maikaʻi loa a kūpono no ka hoʻohui ʻana i lilo i kumu o ka noiʻi. Ma waena o lākou, ʻo nā modula photodetector InGaAs pāʻoihana o 70GHz a me 110GHz kokoke i nā mea a pau e hoʻohana i nā hale hoʻohui nalu. Ma muli o ka ʻokoʻa o nā mea substrate, hiki ke hoʻokaʻawale ʻia nā mea nānā kiʻi InGaAs i hui pū ʻia i ʻelua ʻano: INP-based a me Si-based. ʻO ka mea epitaxial ma InP substrates he kiʻekiʻe kiʻekiʻe a ʻoi aku ka maikaʻi no ka hana ʻana i nā mea hana kiʻekiʻe. Eia nō naʻe, no nā mea pūʻulu III-V i ulu a hoʻopaʻa ʻia paha ma nā substrates Si, ma muli o nā ʻano like ʻole ma waena o nā mea InGaAs a me nā substrates Si, ʻoi aku ka maikaʻi o ka mea a i ʻole ka maikaʻi o ka interface, a aia kahi lumi nui no ka hoʻomaikaʻi ʻana i ka hana o nā mea hana.

 

ʻO ke kūpaʻa o ka photodetector i nā ʻano noiʻi like ʻole, ʻoi aku ka maikaʻi ma lalo o nā kūlana koʻikoʻi, ʻo ia kekahi o nā kumu nui i nā noi kūpono. I nā makahiki i hala iho nei, ke alo nei nā ʻano mea ʻike hou e like me perovskite, organik a me nā mea ʻelua-dimensional, ka mea i huki nui i ka nānā ʻana, ke alo nei i nā pilikia he nui ma ke ʻano o ka paʻa lōʻihi ma muli o ka maʻalahi o nā mea ponoʻī e nā kumu kūlohelohe. I kēia manawa, ʻaʻole i oʻo ke kaʻina hana hoʻohui o nā mea hou, a pono mau ka ʻimi hou ʻana no ka hana nui a me ka hana kūlike.

ʻOiai hiki i ka hoʻokomo ʻana i nā inductors ke hoʻonui i ka bandwidth o nā polokalamu i kēia manawa, ʻaʻole ia i kaulana i nā ʻōnaehana kamaʻilio optical digital. No laila, pehea e pale aku ai i nā hopena maikaʻi ʻole e hōʻemi hou i nā ʻāpana RC parasitic o ka hāmeʻa kekahi o nā kuhikuhi noiʻi o ka photodetector kiʻekiʻe. ʻO ka lua, ʻoiai ke piʻi mau nei ka bandwidth o ka nalu a me nā photodetectors hui pū ʻia, e hoʻomaka hou ka paʻa ma waena o ka bandwidth a me ka pane. ʻOiai ua hōʻike ʻia ʻo Ge/Si photodetectors a me InGaAs photodetector me kahi bandwidth 3dB ma mua o 200GHz, ʻaʻole ʻoluʻolu kā lākou mau kuleana. Pehea e hoʻonui ai i ka bandwidth me ka mālama ʻana i ka pane maikaʻi he kumuhana noiʻi koʻikoʻi, e koi ana i ka hoʻokomo ʻana i nā mea hana-kūpono kaʻina hou (kiʻekiʻe ka neʻe ʻana a me ka coefficient absorption kiʻekiʻe) a i ʻole nā ​​hale hana kiʻekiʻe kiʻekiʻe e hoʻoponopono ai. Eia kekahi, i ka piʻi ʻana o ka bandwidth o ka hāmeʻa, e piʻi mālie nā hiʻohiʻona noi o nā mea ʻike i nā loulou photonic microwave. ʻAʻole like me ka liʻiliʻi o ka mana optical a me ka ʻike kiʻekiʻe-sensitivity i ke kamaʻilio optical, ʻo kēia hiʻohiʻona, ma ke kumu o ka bandwidth kiʻekiʻe, he koi mana saturation kiʻekiʻe no ka hanana kiʻekiʻe. Eia naʻe, hoʻohana maʻamau nā hāmeʻa bandwidth kiʻekiʻe i nā hale liʻiliʻi liʻiliʻi, no laila ʻaʻole maʻalahi ka hana ʻana i nā photodetectors kiʻekiʻe-wikiwiki a me kahi kiʻekiʻe-saturation-power, a pono paha nā mea hou i ka lawe ʻana a me ka hoʻopau wela o nā mea hana. ʻO ka mea hope loa, ʻo ka hōʻemi ʻana i ke au pōʻeleʻele o nā mea ʻike wikiwiki kiʻekiʻe he pilikia ia e pono ai e hoʻoponopono nā photodetectors me ka lattice mismatch. ʻO ke au ʻeleʻele e pili nui ana i ka maikaʻi aniani a me ke ʻano o ka ʻili o ka mea. No laila, ʻo nā kaʻina hana nui e like me ka heteroepitaxy kiʻekiʻe a i ʻole ka hoʻopaʻa ʻana ma lalo o nā ʻōnaehana lattice mismatch pono e noiʻi hou aʻe.


Ka manawa hoʻouna: ʻAukake-20-2025