Mea ʻike kiʻi avalanche infrared paepae haʻahaʻa

ʻO ka infrared paepae haʻahaʻamea ʻike kiʻi avalanche

ʻO ka mea ʻike kiʻi avalanche infrared (Mea ʻike kiʻi APD) he papa onā mea hana photoelectric semiconductore hoʻopuka ana i ka loaʻa kiʻekiʻe ma o ka hopena ionization collision, i mea e hoʻokō ai i ka hiki ke ʻike i kekahi mau photons a i ʻole nā ​​​​photons hoʻokahi. Eia nō naʻe, i loko o nā ʻano photodetector APD maʻamau, ʻo ke kaʻina hana hoʻopuehu ʻole o ka mea lawe kaulike e alakaʻi ai i ka nalowale o ka ikehu, i mea e pono ai ka voltage paepae avalanche e hiki i ka 50-200 V. Hoʻokau kēia i nā koi kiʻekiʻe ma ka voltage drive o ka hāmeʻa a me ka hoʻolālā kaapuni heluhelu, e hoʻonui ana i nā kumukūʻai a me ka palena ʻana i nā noi ākea.

I kēia mau lā iho nei, ua hāpai ka noiʻi Kina i kahi ʻano hou o ka mea ʻike avalanche kokoke i ka infrared me ka voltage paepae avalanche haʻahaʻa a me ke kiʻekiʻe o ka ʻike. Ma muli o ka homojunction self-doping o ka papa atomic, hoʻoponopono ka photodetector avalanche i ka hoʻopuehu ʻino i hoʻokumu ʻia e ke kūlana kīnā interface i hiki ʻole ke pale ʻia i ka heterojunction. I kēia manawa, hoʻohana ʻia ke kahua uila "peak" kūloko ikaika i hoʻokumu ʻia e ka uhaki symmetry unuhi e hoʻonui i ka pilina coulomb ma waena o nā mea lawe, kāohi i ka hoʻopuehu ʻana o ke ʻano phonon ma waho o ka mokulele, a hoʻokō i kahi pono pālua kiʻekiʻe o nā mea lawe ʻole kaulike. I ka mahana o ka lumi, kokoke ka ikehu paepae i ka palena theoretical Eg (ʻo Eg ka band gap o ka semiconductor) a ʻo ka ʻike ʻike o ka mea ʻike avalanche infrared a hiki i ka pae 10000 photon.

Ua hoʻokumu ʻia kēia haʻawina ma ka atom-layer self-doped tungsten diselenide (WSe₂) homojunction (two-dimensional transition metal chalcogenide, TMD) ma ke ʻano he gain medium no nā avalanches o ka mea lawe ukana. Hoʻokō ʻia ka spatial translational symmetry breaking ma ka hoʻolālā ʻana i kahi topography step mutation e hoʻoulu ai i kahi kahua uila "spike" kūloko ikaika ma ka interface homojunction mutant.

Eia kekahi, hiki i ka mānoanoa atomika ke kāohi i ka ʻano hoʻopuehu i hoʻomalu ʻia e ke ʻano phonon, a hoʻomaopopo i ke kaʻina hana wikiwiki a me ka hoʻonui ʻana o ka mea lawe ʻole kaulike me ka pohō haʻahaʻa loa. Lawe mai kēia i ka ikehu paepae avalanche ma ka mahana o ka lumi kokoke i ka palena theoretical ie ka semiconductor material bandgap Eg. Ua hoʻemi ʻia ka voltage paepae avalanche mai 50 V a i 1.6 V, e ʻae ana i nā mea noiʻi e hoʻohana i nā kaapuni kikohoʻe haʻahaʻa haʻahaʻa e hoʻokele i ka avalanche.mea ʻike kiʻia me nā diode hoʻokele a me nā transistors. Hoʻomaopopo kēia haʻawina i ka hoʻololi pono a me ka hoʻohana ʻana i ka ikehu lawe ʻole kaulike ma o ka hoʻolālā ʻana o ka hopena hoʻonui avalanche paepae haʻahaʻa, e hāʻawi ana i kahi hiʻohiʻona hou no ka hoʻomohala ʻana o ka hanauna e hiki mai ana o ka ʻenehana ʻike infrared avalanche koʻikoʻi loa, paepae haʻahaʻa a me ka loaʻa kiʻekiʻe.