Noiʻi holomua o InGaAs photodetector

Ka holomua noiʻi oʻO InGaAs photodetector

Me ka ulu nui o ka leo hoʻoili ʻikepili kamaʻilio, ua hoʻololi ka ʻenehana interconnection optical i ka ʻenehana hoʻohui uila kuʻuna a ua lilo i ʻenehana nui no ka hoʻouna wikiwiki haʻahaʻa haʻahaʻa haʻahaʻa a lōʻihi. Ma ke ʻano he kumu nui o ka hopena hoʻokipa optical, ʻo kamea nānā kiʻiua piʻi aʻe nā koi no kāna hana kiʻekiʻe-wikiwiki. Ma waena o lākou, he liʻiliʻi ka nui o ka waveguide i hoʻohui ʻia i ka photodetector, kiʻekiʻe i ka bandwidth, a maʻalahi hoʻi e hoʻohui ʻia ma luna o ka chip me nā mea hana optoelectronic ʻē aʻe, ʻo ia ka manaʻo noiʻi o ka photodetection kiʻekiʻe. a ʻo ia nā mea ʻike kiʻi kiʻi nui loa i ka hui kamaʻilio kokoke-infrared.

ʻO InGaAs kekahi o nā mea kūpono no ka loaʻa ʻana o ka wikiwiki kiʻekiʻe anā mea nānā kiʻi pane kiʻekiʻe. ʻO ka mea mua, ʻo InGaAs kahi mea semiconductor bandgap pololei, a hiki ke hoʻoponopono ʻia kona laulā bandgap e ka ratio ma waena o In a me Ga, e hiki ai ke ʻike i nā hōʻailona optical o nā hawewe like ʻole. Ma waena o lākou, In0.53Ga0.47As ua hoʻohālikelike pono ʻia me ka InP substrate lattice a loaʻa iā ia ka coefficient absorption māmā kiʻekiʻe loa i ka hui kamaʻilio optical. ʻO ia ka mea i hoʻohana nui ʻia i ka hoʻomākaukau ʻana i ka photodetector a loaʻa nō hoʻi ka ʻoi loa o ka pōʻeleʻele o kēia manawa a me ka hana responsivity. ʻO ka lua, ʻo nā mea InGaAs a me InP he kiʻekiʻe ka wikiwiki o ka electron drift velocities, me kā lākou saturated electron drift velocities ma kahi o 1 × 107cm/s. I kēia manawa, ma lalo o nā māla uila, hōʻike nā mea InGaAs a me InP i nā hopena overshoot electron velocity, me kā lākou overshoot velocities hiki i 4 × 107cm / s a ​​me 6 × 107cm / s. He kūpono ia i ka loaʻa ʻana o ka bandwidth crossing kiʻekiʻe. I kēia manawa, ʻo InGaAs photodetectors ka mea nui loa o nā photodetectors no ka kamaʻilio optical. Ua hoʻomohala ʻia nā mea ʻike hanana liʻiliʻi liʻiliʻi, hope, a me ka bandwidth kiʻekiʻe, hoʻohana nui ʻia i nā noi e like me ka wikiwiki kiʻekiʻe a me ka saturation kiʻekiʻe.

Eia nō naʻe, ma muli o nā palena o kā lākou hui ʻana, paʻakikī nā mea ʻike hanana i ka honua e hoʻohui me nā mea hana optoelectronic ʻē aʻe. No laila, me ka piʻi nui ʻana o ka noi no ka hoʻohui optoelectronic, ua hoʻohui ʻia ka nalu nalu i hui pū ʻia me InGaAs photodetectors me ka hana maikaʻi loa a kūpono no ka hoʻohui ʻana i lilo i kumu o ka noiʻi. Ma waena o lākou, ʻo nā modula photodetector InGaAs pāʻoihana o 70GHz a me 110GHz kokoke i nā mea a pau e hoʻohana i nā hale hoʻohui nalu. Ma muli o ka ʻokoʻa o nā mea substrate, hiki ke hoʻokaʻawale ʻia nā mea nānā kiʻi InGaAs i hui pū ʻia i ʻelua ʻano: INP-based a me Si-based. ʻO ka mea epitaxial ma InP substrates he kiʻekiʻe kiʻekiʻe a ʻoi aku ka maikaʻi no ka hana ʻana i nā mea hana kiʻekiʻe. Eia nō naʻe, no nā mea pūʻulu III-V i ulu a hoʻopaʻa ʻia paha ma nā substrates Si, ma muli o nā ʻano like ʻole ma waena o nā mea InGaAs a me nā substrates Si, ʻoi aku ka maikaʻi o ka mea a i ʻole ka maikaʻi o ka interface, a aia kahi lumi nui no ka hoʻomaikaʻi ʻana i ka hana o nā mea hana.

Hoʻohana ka hāmeʻa iā InGaAsP ma kahi o InP ma ke ʻano he mea hoʻopau ʻāina. ʻOiai e hoʻemi ana ia i ka wikiwiki o ka hoʻoheheʻe ʻana o nā electrons i kekahi ʻano, hoʻomaikaʻi ia i ka hui ʻana o nā kukui hanana mai ke alakaʻi nalu a i ka ʻāpana absorption. I ka manawa like, wehe ʻia ka papa hoʻopili InGaAsP N-type, a ua hoʻokumu ʻia kahi āpau liʻiliʻi ma kēlā me kēia ʻaoʻao o ka ʻili P-type, e hoʻonui maikaʻi ana i ke kaohi ma ke kahua māmā. He kūpono ia i ka hāmeʻa e loaʻa ai kahi kuleana kiʻekiʻe.