Holomua Noiʻi o ka mea ʻike kiʻi InGaAs

Holomua Noiʻi oMea ʻike kiʻi InGaAs

Me ka ulu nui ʻana o ka nui o ka hoʻouna ʻikepili kamaʻilio, ua pani ka ʻenehana pilina optical i ka ʻenehana pilina uila kuʻuna a ua lilo i ʻenehana nui no ka hoʻouna wikiwiki haʻahaʻa a me ka lōʻihi. Ma ke ʻano he ʻāpana koʻikoʻi o ka hopena loaʻa optical, ʻo kamea ʻike kiʻiLoaʻa i nā koi kiʻekiʻe no kāna hana wikiwiki. I waena o lākou, he liʻiliʻi ka nui o ka photodetector waveguide coupled, kiʻekiʻe ka bandwidth, a maʻalahi hoʻi e hoʻohui ʻia ma ka chip me nā mea optoelectronic ʻē aʻe, ʻo ia ke kikowaena noiʻi o ka photodetection wikiwiki. a ʻo ia nā photodetectors hōʻike nui loa ma ke kāʻei kamaʻilio kokoke-infrared.

ʻO InGaAs kekahi o nā mea kūpono no ka hoʻokō ʻana i ka wikiwiki a menā mea ʻike kiʻi pane kiʻekiʻeʻO ka mea mua, he mea semiconductor bandgap pololei ʻo InGaAs, a hiki ke hoʻoponopono ʻia kona laulā bandgap e ka ratio ma waena o In a me Ga, e hiki ai ke ʻike i nā hōʻailona optical o nā nalu like ʻole. I waena o lākou, ua kūlike loa ʻo In0.53Ga0.47As me ka lattice substrate InP a he coefficient absorption kukui kiʻekiʻe loa i ka hui kamaʻilio optical. ʻO ia ka mea i hoʻohana nui ʻia i ka hoʻomākaukau ʻana o ka photodetector a loaʻa iā ia ka hana ʻoi loa o ke au pōʻeleʻele a me ka hana pane. ʻO ka lua, he kiʻekiʻe loa ka wikiwiki o ka electron drift o nā mea InGaAs a me InP, me ko lākou wikiwiki electron drift saturated ma kahi o 1 × 107 cm / s. I kēia manawa, ma lalo o nā kahua uila kikoʻī, hōʻike nā mea InGaAs a me InP i nā hopena overshoot wikiwiki electron, me ko lākou wikiwiki overshoot e hiki ana i 4 × 107 cm / s a ​​me 6 × 107 cm / s. He mea kūpono ia no ka hoʻokō ʻana i kahi bandwidth crossing kiʻekiʻe. I kēia manawa, ʻo nā photodetectors InGaAs nā photodetectors kaulana loa no ke kamaʻilio optical. Ua hoʻomohala ʻia hoʻi nā mea ʻike hanana ʻili liʻiliʻi, back-incident, a me high-bandwidth, i hoʻohana nui ʻia i nā noi e like me ka wikiwiki kiʻekiʻe a me ka saturation kiʻekiʻe.

Eia nō naʻe, ma muli o nā palena o kā lākou mau ʻano hoʻopili ʻana, he paʻakikī ke hoʻohui i nā mea ʻike hanana ʻili me nā mea hana optoelectronic ʻē aʻe. No laila, me ka piʻi ʻana o ke koi no ka hoʻohui ʻana optoelectronic, ua lilo mālie nā photodetectors InGaAs i hoʻopili ʻia me ka waveguide me ka hana maikaʻi loa a kūpono no ka hoʻohui ʻana i ke kikowaena o ka noiʻi. I waena o lākou, ʻo nā modula photodetector InGaAs kalepa o 70GHz a me 110GHz kokoke i nā mea āpau e hoʻohana i nā ʻano hoʻopili waveguide. Wahi a ka ʻokoʻa o nā mea substrate, hiki ke hoʻokaʻawale nui ʻia nā photodetectors InGaAs i hoʻopili ʻia me ka waveguide i ʻelua ʻano: INP-based a me Si-based. He kiʻekiʻe ke ʻano o ka mea epitaxial ma nā substrates InP a ʻoi aku ka kūpono no ka hana ʻana i nā mea hana kiʻekiʻe. Eia nō naʻe, no nā mea hui III-V i ulu ʻia a hoʻopaʻa ʻia paha ma nā substrates Si, ma muli o nā ʻano like ʻole ma waena o nā mea InGaAs a me nā substrates Si, ʻaʻole maikaʻi ka maikaʻi o ka mea a i ʻole ka interface, a he nui nō ka lumi no ka hoʻomaikaʻi ʻana i ka hana o nā mea hana.

Hoʻohana ka hāmeʻa iā InGaAsP ma kahi o InP ma ke ʻano he mea hoʻopau ʻāpana. ʻOiai e hoʻemi ana i ka wikiwiki o ka saturation drift o nā electrons i kekahi ʻano, hoʻomaikaʻi ia i ka hoʻopili ʻana o ka mālamalama incident mai ke alakaʻi nalu a i ka ʻāpana omo. I ka manawa like, ua wehe ʻia ka papa hoʻopili ʻano-N InGaAsP, a ua hana ʻia kahi hakahaka liʻiliʻi ma kēlā me kēia ʻaoʻao o ka ʻili ʻano-P, e hoʻoikaika pono ana i ke kaohi ʻana ma ke kahua mālamalama. He mea kōkua ia i ka hāmeʻa e hoʻokō i kahi pane kiʻekiʻe.