ʻElemene hana photonics silikona

ʻElemene hana photonics silikona

ʻO nā ʻāpana hana Photonics e pili pono ana i nā pilina ikaika i hoʻolālā ʻia ma waena o ka mālamalama a me nā mea. ʻO kahi ʻāpana hana maʻamau o ka photonics he modulator optical. ʻO nā mea a pau i hoʻokumu ʻia ma ka silicon i kēia manawanā mea hoʻololi ʻike makaua hoʻokumu ʻia ma ka hopena o ka mea lawe manuahi plasma. ʻO ka hoʻololi ʻana i ka helu o nā electrons manuahi a me nā lua i loko o kahi mea silicon ma o ka doping, nā ʻano uila a optical paha hiki ke hoʻololi i kāna index refractive paʻakikī, kahi hana i hōʻike ʻia ma nā kaulike (1,2) i loaʻa ma ke kau ʻana i ka ʻikepili mai Soref lāua ʻo Bennett ma kahi nalu o 1550 nanometers. Ke hoʻohālikelike ʻia me nā electrons, hana nā lua i kahi hapa nui o nā loli index refractive maoli a me ka noʻonoʻo, ʻo ia hoʻi, hiki iā lākou ke hana i kahi loli pae nui no kahi loli pohō i hāʻawi ʻia, no laila i lokoNā modulators Mach-Zehndera me nā modulators apo, makemake pinepine ʻia e hoʻohana i nā lua e hana ainā modulators pae.

ʻO nā ʻano like ʻolemea hoʻololi silicon (Si)Ua hōʻike ʻia nā ʻano ma ke Kiʻi 10A. I loko o kahi modulator injection carrier, aia ke kukui i loko o ka silicon intrinsic i loko o kahi hui pine ākea loa, a ua hoʻokomo ʻia nā electrons a me nā lua. Eia nō naʻe, ʻoi aku ka lohi o ia mau modulators, maʻamau me ka bandwidth o 500 MHz, no ka mea, ʻoi aku ka lōʻihi o ka hui hou ʻana o nā electrons manuahi a me nā lua ma hope o ka injection. No laila, hoʻohana pinepine ʻia kēia ʻano ma ke ʻano he attenuator optical variable (VOA) ma mua o ka modulator. I loko o kahi modulator depletion carrier, aia ka ʻāpana kukui i loko o kahi hui pn haiki, a ua hoʻololi ʻia ka laulā depletion o ka hui pn e kahi kahua uila i hoʻopili ʻia. Hiki i kēia modulator ke hana i nā wikiwiki ma mua o 50Gb/s, akā he pohō hoʻokomo hope kiʻekiʻe. ʻO ka vpil maʻamau he 2 V-cm. Loaʻa i kahi modulator metal oxide semiconductor (MOS) (ʻoiaʻiʻo semiconductor-oxide-semiconductor) kahi papa oxide lahilahi i loko o kahi hui pn. ʻAe ia i kekahi hōʻiliʻili ʻana o ka mea lawe a me ka hoʻopau ʻana o ka mea lawe, e ʻae ana i kahi VπL liʻiliʻi ma kahi o 0.2 V-cm, akā he hemahema ia o nā pohō optical kiʻekiʻe a me ka capacitance kiʻekiʻe no kēlā me kēia lōʻihi. Eia kekahi, aia nā modulators absorption uila SiGe e pili ana i ka neʻe ʻana o ka band edge SiGe (silicon Germanium alloy). Eia kekahi, aia nā modulators graphene e hilinaʻi nei i ka graphene e hoʻololi ma waena o nā metala omo a me nā insulators moakaka. Hōʻike kēia i ka ʻokoʻa o nā noi o nā ʻano hana like ʻole e hoʻokō ai i ka modulation hōʻailona optical wikiwiki, haʻahaʻa.

Kiʻi 10: (A) Kiʻikuhi ʻāpana kea o nā hoʻolālā modulator optical like ʻole e pili ana i ka silicon a me (B) kiʻikuhi ʻāpana kea o nā hoʻolālā mea ʻike optical.

Ua hōʻike ʻia kekahi mau mea ʻike kukui i hoʻokumu ʻia i ka silicon ma ke Kiʻi 10B. ʻO ka mea hoʻomoʻa he germanium (Ge). Hiki iā Ge ke hoʻomoʻa i ka mālamalama ma nā nalu haʻahaʻa a hiki i kahi 1.6 microns. Hōʻike ʻia ma ka hema ka ʻano pine kūleʻa loa i kēia lā. Hana ʻia ia me ka silicon doped ʻano-P kahi e ulu ai ʻo Ge. Loaʻa iā Ge lāua ʻo Si kahi mismatch lattice 4%, a i mea e hōʻemi ai i ka dislocation, ua ulu mua ʻia kahi papa lahilahi o SiGe ma ke ʻano he papa buffer. Hana ʻia ka doping ʻano-N ma luna o ka papa Ge. Hōʻike ʻia kahi photodiode metal-semiconductor-metal (MSM) ma waenakonu, a me kahi APD (ʻIke kiʻi avalanche) ua hōʻike ʻia ma ka ʻākau. Aia ka ʻāpana avalanche ma APD ma Si, nona nā ʻano walaʻau haʻahaʻa i hoʻohālikelike ʻia me ka ʻāpana avalanche ma nā mea elemental Group III-V.

I kēia manawa, ʻaʻohe hopena me nā pono maopopo i ka hoʻohui ʻana i ka loaʻa optical me ka silicon photonics. Hōʻike ka Kiʻi 11 i kekahi mau koho hiki ke hoʻonohonoho ʻia e ka pae ʻākoakoa. Ma ka ʻaoʻao hema loa he mau hoʻohui monolithic e pili ana i ka hoʻohana ʻana i ka germanium i ulu ʻia epitaxially (Ge) ma ke ʻano he mea loaʻa optical, nā waveguides aniani erbium-doped (Er) (e like me Al2O3, ka mea e pono ai ka pumping optical), a me nā kiko quantum gallium arsenide (GaAs) i ulu ʻia epitaxially. ʻO ke kolamu aʻe he wafer i ka wafer assembly, e pili ana i ka oxide a me ka hoʻopili organik ma ka ʻāpana loaʻa hui III-V. ʻO ke kolamu aʻe he chip-to-wafer assembly, e pili ana i ka hoʻokomo ʻana i ka chip hui III-V i loko o ka lua o ka silicon wafer a laila mīkini i ka waveguide structure. ʻO ka pono o kēia ʻano kolamu ʻekolu mua, hiki ke hoʻāʻo piha ʻia ka hāmeʻa i loko o ka wafer ma mua o ka ʻoki ʻana. ʻO ke kolamu ʻākau loa he chip-to-chip assembly, me ka hoʻopili pololei ʻana o nā chips silicon i nā chips hui III-V, a me ka hoʻopili ʻana ma o ka lens a me nā grating couplers. Ke neʻe nei ke ʻano o nā noi kālepa mai ka ʻākau a i ka ʻaoʻao hema o ka pakuhi i nā hoʻonā i hoʻohui ʻia a hoʻohui ʻia.

Kiʻi 11: Pehea e hoʻohui ʻia ai ka loaʻa optical i loko o nā photonics e pili ana i ka silicon. Ke neʻe ʻoe mai ka hema a i ka ʻākau, e neʻe mālie ana ke kiko hoʻokomo hana i hope i ke kaʻina hana.