ʻAno o ka mea ʻike kiʻi InGaAs

ʻAno oMea ʻike kiʻi InGaAs

Mai ka makahiki 1980, ua aʻo nā mea noiʻi ma ka home a me waho i ke ʻano o nā mea ʻike kiʻi InGaAs, i māhele nui ʻia i ʻekolu ʻano. ʻO lākou ʻo InGaAs metal-Semiconductor-metal photodetector (MSM-PD), InGaAs PIN Photodetector (PIN-PD), a me InGaAs Avalanche Photodetector (APD-PD). Aia nā ʻokoʻa koʻikoʻi i ke kaʻina hana a me ke kumukūʻai o nā mea ʻike kiʻi InGaAs me nā ʻano like ʻole, a aia kekahi mau ʻokoʻa nui i ka hana o ka hāmeʻa.

ʻO ka InGaAs metala-semiconductor-metalamea ʻike kiʻi, i hōʻike ʻia ma ke Kiʻi (a), he ʻano kūikawā ia e pili ana i ka hui ʻana o Schottky. I ka makahiki 1992, ua hoʻohana ʻo Shi et al. i ka ʻenehana epitaxy phase vapor metal-organic haʻahaʻa haʻahaʻa (LP-MOVPE) e ulu i nā papa epitaxy a ua hoʻomākaukau i ka photodetector InGaAs MSM, nona ka pane kiʻekiʻe o 0.42 A/W ma kahi nalu o 1.3 μm a me kahi au pouli ma lalo o 5.6 pA/ μm² ma 1.5 V. I ka makahiki 1996, ua hoʻohana ʻo zhang et al. i ka epitaxy beam molecular phase gas (GSMBE) e ulu i ka papa epitaxy InAlAs-InGaAs-InP. Ua hōʻike ka papa InAlAs i nā ʻano resistivity kiʻekiʻe, a ua hoʻomaikaʻi ʻia nā kūlana ulu e ke ana ʻana o ka diffraction X-ray, i hiki ai i ka mismatch lattice ma waena o nā papa InGaAs a me InAlAs i loko o ka pae o 1 × 10⁻³. ʻO ka hopena o kēia, ua hoʻonui ʻia ka hana o ka hāmeʻa me ke au pouli ma lalo o 0.75 pA/μm² ma 10 V a me ka pane wikiwiki a hiki i ka 16 ps ma 5 V. Ma ke ʻano holoʻokoʻa, he maʻalahi a maʻalahi hoʻi ka hoʻohui ʻana o ka photodetector ʻano MSM, e hōʻike ana i ke au pouli haʻahaʻa (pA order), akā e hōʻemi ka electrode metala i ka wahi omo mālamalama kūpono o ka hāmeʻa, no laila ua haʻahaʻa ka pane ma mua o nā ʻano ʻē aʻe.

Hoʻokomo ka photodetector PIN InGaAs i kahi papa kūloko ma waena o ka papa hoʻopili ʻano P a me ka papa hoʻopili ʻano N, e like me ka mea i hōʻike ʻia ma ke Kiʻi (b), kahi e hoʻonui ai i ka laulā o ka ʻāpana depletion, no laila e hoʻomālamalama ana i nā hui electron-hole hou aʻe a hana i kahi photocurrent nui aʻe, no laila he hana hoʻokele electron maikaʻi loa ia. I ka makahiki 2007, ua hoʻohana ʻo A.Poloczek et al. iā MBE e ulu i kahi papa buffer haʻahaʻa haʻahaʻa e hoʻomaikaʻi i ka ʻili a lanakila i ka mismatch lattice ma waena o Si a me InP. Ua hoʻohana ʻia ʻo MOCVD e hoʻohui i ka hoʻonohonoho PIN InGaAs ma ka substrate InP, a ʻo ka pane ʻana o ka hāmeʻa ma kahi o 0.57A /W. I ka makahiki 2011, ua hoʻohana ka Army Research Laboratory (ALR) i nā photodetectors PIN e aʻo i kahi mea kiʻi liDAR no ka hoʻokele, ka pale ʻana i nā pilikia/kuʻi, a me ka ʻike/ʻike ʻana i ka pahuhopu pōkole no nā kaʻa honua liʻiliʻi unmanned, i hoʻohui ʻia me kahi chip amplifier microwave haʻahaʻa ke kumu kūʻai i hoʻomaikaʻi nui i ka ratio signal-to-noise o ka photodetector PIN InGaAs. Ma kēia kumu, i ka makahiki 2012, ua hoʻohana ʻo ALR i kēia mea hana kiʻi liDAR no nā robots, me kahi laulā ʻike ʻoi aku ma mua o 50 m a me kahi hoʻonā o 256 × 128.

ʻO nā InGaAsmea ʻike kiʻi avalanchehe ʻano photodetector me ka loaʻa, ʻo ke ʻano o ia mea i hōʻike ʻia ma ke Kiʻi (c). Loaʻa i ka hui electron-hole ka ikehu lawa ma lalo o ka hana o ke kahua uila i loko o ka ʻāpana pālua, i mea e kuʻi ai me ka atom, hana i nā hui electron-hole hou, hana i kahi hopena avalanche, a hoʻonui i nā mea lawe ʻole-equilibrium i loko o ka mea. I ka makahiki 2013, ua hoʻohana ʻo George M iā MBE e ulu i nā mea hoʻohuihui InGaAs a me InAlAs ma kahi substrate InP, me ka hoʻohana ʻana i nā loli i ka haku mele alloy, ka mānoanoa o ka papa epitaxial, a me ka doping i ka ikehu mea lawe modulated e hoʻonui i ka ionization electroshock me ka hoʻemi ʻana i ka ionization lua. Ma ka loaʻa hōʻailona hoʻopuka like, hōʻike ʻo APD i ka walaʻau haʻahaʻa a me ke au pouli haʻahaʻa. I ka makahiki 2016, ua kūkulu ʻo Sun Jianfeng et al. i kahi hoʻonohonoho o ka paepae hoʻokolohua laser active imaging 1570 nm e pili ana i ka photodetector avalanche InGaAs. ʻO ke kaapuni kūloko oMea ʻike kiʻi APDloaʻa nā leo kani a hoʻopuka pololei i nā hōʻailona kikohoʻe, e hoʻopili ana i ka hāmeʻa holoʻokoʻa. Hōʻike ʻia nā hopena hoʻokolohua ma ke Kiʻi (d) a me (e). ʻO ke Kiʻi (d) he kiʻi kino o ka pahuhopu kiʻi, a ʻo ke Kiʻi (e) he kiʻi mamao ʻekolu-dimensional. Hiki ke ʻike maopopo ʻia he mamao hohonu ko ka ʻāpana puka makani o ka ʻāpana c me ka ʻāpana A a me b. Hoʻomaopopo ka paepae i ka laulā pulse ma lalo o 10 ns, ikehu pulse hoʻokahi (1 ~ 3) mJ hiki ke hoʻololi ʻia, ke kihi kahua lens e loaʻa ana o 2°, ka alapine hana hou o 1 kHz, ka lakio hana detector ma kahi o 60%. Mahalo i ka loaʻa ʻana o ka photocurrent kūloko o APD, ka pane wikiwiki, ka nui compact, ka lōʻihi a me ke kumukūʻai haʻahaʻa, hiki i nā photodetectors APD ke kiʻekiʻe aʻe i ka helu ʻike ma mua o nā photodetectors PIN, no laila ʻo ka liDAR mainstream o kēia manawa ka mea nui i hoʻomalu ʻia e nā photodetectors avalanche.

Ma keʻano holoʻokoʻa, me ka wikiwiki o ka hoʻomohala ʻana o ka ʻenehana hoʻomākaukau InGaAs ma ka home a ma waho, hiki iā mākou ke hoʻohana akamai iā MBE, MOCVD, LPE a me nā ʻenehana ʻē aʻe e hoʻomākaukau i ka papa epitaxial InGaAs kiʻekiʻe ma kahi ākea ma ka substrate InP. Hōʻike nā photodetectors InGaAs i ke au pouli haʻahaʻa a me ka pane kiʻekiʻe, ʻo ke au pouli haʻahaʻa loa ma lalo o 0.75 pA/μm², ʻo ka pane kiʻekiʻe loa a hiki i ka 0.57 A/W, a he pane wikiwiki (ps order). ʻO ka hoʻomohala ʻana o nā photodetectors InGaAs i ka wā e hiki mai ana e kālele ana i nā ʻano ʻelua aʻe: (1) Hoʻoulu pololei ʻia ka papa epitaxial InGaAs ma ka substrate Si. I kēia manawa, ʻo ka hapa nui o nā mea microelectronic ma ka mākeke e pili ana iā Si, a ʻo ka hoʻomohala hoʻohui ʻia o InGaAs a me Si ma hope iho ke ʻano maʻamau. He mea nui ka hoʻoponopono ʻana i nā pilikia e like me ka mismatch lattice a me ka ʻokoʻa o ka coefficient expansion thermal no ke aʻo ʻana iā InGaAs/Si; (2) Ua oʻo ka ʻenehana wavelength 1550 nm, a ʻo ka wavelength hoʻonui ʻia (2.0 ~ 2.5) μm ke kuhikuhi noiʻi e hiki mai ana. Me ka hoʻonui ʻia o nā ʻāpana In, ʻo ka mismatch lattice ma waena o ka substrate InP a me ka papa epitaxial InGaAs e alakaʻi i ka dislocation koʻikoʻi a me nā hemahema, no laila pono e hoʻomaikaʻi i nā ʻōnaehana hana hāmeʻa, e hōʻemi i nā hemahema lattice, a e hōʻemi i ke au pouli o ka hāmeʻa.