Kiʻi ʻoniʻoni ʻoniʻoni lithium niobate (LN) photodetector

Kiʻi ʻoniʻoni ʻoniʻoni lithium niobate (LN) photodetector

Loaʻa i ka Lithium niobate (LN) kahi ʻano kristal kūikawā a me nā hopena kino waiwai, e like me nā hopena nonlinear, nā hopena electro-optic, nā hopena pyroelectric, a me nā hopena piezoelectric. I ka manawa like, loaʻa iā ia nā pōmaikaʻi o ka puka aniani ākea ākea ākea a me ka paʻa lōʻihi. ʻO kēia mau hiʻohiʻona e hoʻolilo iā LN i kahua koʻikoʻi no ka hanauna hou o nā photonics i hoʻohui ʻia. I loko o nā'ōnaehana optical a me nā'ōnaehana optoelectronic, hiki i nā hi'ohi'ona o LN ke hā'awi i nā hana waiwai a me ka hana, e ho'oikaika ana i ka ho'omohala'ana i ka'ike'ike'ike'ike, ka'ike'ike'ike, a me nā māhele'ike. Eia nō naʻe, ma muli o ka nāwaliwali o ka absorption a me nā waiwai insulation o ka lithium niobate, ʻo ka hoʻopili ʻana o ka lithium niobate ke kū nei i ka pilikia o ka ʻike paʻakikī. I nā makahiki i hala iho nei, ʻo nā hōʻike ma kēia kahua ka nui o ka waveguide integrated photodetectors a me heterojunction photodetectors.
Hoʻopili pinepine ʻia ka waveguide integrated photodetector e pili ana i ka lithium niobate ma ke kelepona C-band (1525-1565nm). Ma ke ʻano o ka hana, hoʻokani nui ʻo LN i ke kuleana o nā nalu alakaʻi, ʻoiai ke hilinaʻi nui nei ka hana ʻike optoelectronic i nā semiconductors e like me ke silikoni, III-V group narrow bandgap semiconductors, a me nā mea ʻelua-dimensional. I loko o ia ʻano hoʻolālā, hoʻouna ʻia ka mālamalama ma o ka lithium niobate optical waveguides me ka haʻahaʻa haʻahaʻa, a laila hoʻomoʻa ʻia e nā mea semiconductor ʻē aʻe e pili ana i nā hopena photoelectric (e like me ka photoconductivity a i ʻole nā ​​hopena photovoltaic) e hoʻonui i ka manaʻo o ka mea lawe a hoʻololi iā ia i nā hōʻailona uila no ka hoʻopuka. ʻO nā mea maikaʻi he bandwidth hana kiʻekiʻe (~ GHz), haʻahaʻa haʻahaʻa haʻahaʻa, liʻiliʻi liʻiliʻi, a me ka hoʻohālikelike ʻana me ka hoʻohui pū ʻana i ka photonic chip. Eia nō naʻe, ma muli o ka hoʻokaʻawale ʻana o ka lithium niobate a me nā mea semiconductor, ʻoiai ke hana nei kēlā me kēia i kā lākou mau hana ponoʻī, hana wale ʻo LN i ke alakaʻi ʻana i nā nalu a ʻaʻole i hoʻohana maikaʻi ʻia nā waiwai ʻē aʻe. Pāʻani wale nā ​​mea Semiconductor i ka hoʻololi photoelectric a nele i ka hoʻohui ʻana i kekahi me kekahi, e hopena i kahi hui hana liʻiliʻi. Ma ke ʻano o ka hoʻokō kikoʻī, ʻo ka hui ʻana o ka mālamalama mai ke kumu kukui i ka lithium niobate optical waveguide ka hopena i nā poho nui a me nā koi kaʻina hana koʻikoʻi. Eia kekahi, ʻo ka mana optical maoli o ke kukui i hoʻomālamalama ʻia ma ke ala o ka mīkini semiconductor i loko o ka ʻāpana hui ʻana he paʻakikī ke calibrate, e kaupalena ana i kāna hana ʻike.
ʻO ke kuʻunanā mea nānā kiʻihoʻohana ʻia no nā noi kiʻi maʻamau e pili ana i nā mea semiconductor. No laila, no ka lithium niobate, kona haʻahaʻa haʻahaʻa absorption rate a me ka insulating waiwai e hoʻohewa ʻole ʻia e nā mea noiʻi photodetector, a he wahi paʻakikī hoʻi i ke kula. Eia naʻe, ʻo ka hoʻomohala ʻana o ka ʻenehana heterojunction i nā makahiki i hala iho nei ua lawe mai ka manaʻolana i ka noiʻi ʻana o nā photodetectors lithium niobate. Hiki ke hoʻohui like ʻia nā mea ʻē aʻe me ka hoʻoheheʻe māmā ikaika a i ʻole conductivity maikaʻi loa me ka lithium niobate e uku ai i kāna mau hemahema. I ka manawa like, hiki ke hoʻomalu ʻia ka polarization kuʻuna i nā hiʻohiʻona pyroelectric o ka lithium niobate ma muli o kāna anisotropy structural ma ka hoʻololi ʻana i ka wela ma lalo o ka irradiation māmā, a laila e hoʻololi i nā hiʻohiʻona pyroelectric no ka ʻike optoelectronic. Loaʻa i kēia hopena wela ka maikaʻi o ka wideband a me ka hoʻokele ponoʻī, a hiki ke hoʻohui maikaʻi ʻia a hoʻohui ʻia me nā mea ʻē aʻe. ʻO ka hoʻohana like ʻana o nā hopena wela a me nā photoelectric ua wehe i kahi au hou no ka lithium niobate based photodetectors, hiki i nā mea hana ke hoʻohui i nā pono o nā hopena ʻelua. A no ka hoʻoponopono ʻana i nā hemahema a hoʻokō i ka hoʻohui pū ʻana o nā mea maikaʻi, ʻo ia kahi wahi hotspot noiʻi i nā makahiki i hala. Eia kekahi, ʻo ka hoʻohana ʻana i ka implantation ion, band engineering, a me defect engineering he koho maikaʻi nō hoʻi e hoʻonā i ka paʻakikī o ka ʻike ʻana i ka lithium niobate. Eia nō naʻe, ma muli o ka paʻakikī paʻakikī o ka lithium niobate, ke kū nei kēia kahua i nā pilikia nui e like me ka hoʻohui haʻahaʻa, nā ʻōnaehana kiʻi array a me nā ʻōnaehana, a me ka lawa ʻole o ka hana, nona ka waiwai noiʻi nui a me ka lewa.

Kiʻi 1, me ka hoʻohana ʻana i nā mokuʻāina o ka ikehu kīnā i loko o ka bandgap LN ma ke ʻano he mau kikowaena hāʻawi electron, hoʻokumu ʻia nā mea lawe uku manuahi i loko o ka hui conduction ma lalo o ka hoʻoulu ʻana o ka māmā. Hoʻohālikelike ʻia me nā kiʻi kiʻi kiʻi pyroelectric LN ma mua, i kaupalena ʻia i ka wikiwiki pane ma kahi o 100Hz, kēiaLN mea nānā kiʻiʻoi aku ka wikiwiki o ka pane ʻana a hiki i 10kHz. I kēia manawa, ma kēia hana, ua hōʻike ʻia e hiki i ka magnesium ion doped LN ke hoʻokō i ka modulation māmā o waho me ka pane a hiki i 10kHz. Hoʻoikaika kēia hana i ka noiʻi ʻana i ka hana kiʻekiʻe a mekiʻekiʻe-māmā LN photodetectorsi ke kūkulu ʻana i nā pahu kiʻi kiʻi kiʻi kiʻi hoʻokahi i hoʻohui ʻia.
I ka hōʻuluʻulu manaʻo, ke kahua noiʻi okiʻi ʻoniʻoni ʻoniʻoni lithium niobate photodetectorshe koʻikoʻi ʻepekema koʻikoʻi a me ka hiki ke hoʻohana pono. I ka wā e hiki mai ana, me ka hoʻomohala ʻana i ka ʻenehana a me ka hohonu o ka noiʻi, e hoʻomohala ʻia nā kiʻi kiʻi kiʻi ʻoniʻoni ʻoniʻoni lithium niobate (LN) i ka hoʻohui kiʻekiʻe. ʻO ka hoʻohui ʻana i nā ʻano hoʻohui like ʻole e hoʻokō ai i ka hana kiʻekiʻe, pane wikiwiki, a me ka wideband thin film lithium niobate photodetectors ma nā ʻano āpau e lilo i mea ʻoiaʻiʻo, e hoʻoikaika nui i ka hoʻomohala ʻana i ka hoʻohui ʻana ma luna o ka chip a me nā kahua ʻike akamai, a hāʻawi i nā mea hou aku no ka hanauna hou o nā noi photonics.