ʻŌlelo Pōkole: Ke ʻano kumu a me ke kumumanaʻo hana o ka mea ʻike kiʻi avalanche (Mea ʻike kiʻi APD) ua hoʻolauna ʻia, ua kālailai ʻia ke kaʻina hana o ka hoʻonohonoho ʻana o ka hāmeʻa, ua hōʻuluʻulu ʻia ke kūlana noiʻi o kēia manawa, a ua aʻo mua ʻia ka hoʻomohala ʻana o APD i ka wā e hiki mai ana.
1. Hoʻolauna
He mea hana ka mea ʻike kiʻi e hoʻololi i nā hōʻailona mālamalama i nā hōʻailona uila.mea ʻike kiʻi semiconductor, komo ka mea lawe kiʻi i hoʻoulu ʻia e ka photon hanana i ke kaapuni waho ma lalo o ke volta bias i hoʻopili ʻia a hana i kahi photocurrent hiki ke ana ʻia. ʻOiai ma ka pane nui loa, hiki i kahi photodiode PIN ke hana i kahi pālua o nā hui electron-hole ma ka hapa nui, ʻo ia kahi mea hana me ka loaʻa ʻole o loko. No ka pane nui ʻana, hiki ke hoʻohana ʻia kahi photodiode avalanche (APD). Hoʻokumu ʻia ka hopena hoʻonui o APD ma ka photocurrent ma ka hopena collision ionization. Ma lalo o kekahi mau kūlana, hiki i nā electrons a me nā lua i hoʻolalelale ʻia ke loaʻa ka ikehu lawa e kuʻi me ka lattice e hana i kahi pālua hou o nā hui electron-hole. He hopena kaulahao kēia kaʻina hana, i hiki i ka pālua o nā hui electron-hole i hana ʻia e ka absorption māmā ke hana i kahi nui o nā hui electron-hole a hana i kahi photocurrent lua nui. No laila, loaʻa iā APD ka pane kiʻekiʻe a me ka loaʻa kūloko, kahi e hoʻomaikaʻi ai i ka ratio signal-to-noise o ka hāmeʻa. E hoʻohana nui ʻia ʻo APD i nā ʻōnaehana kamaʻilio fiber optical mamao a liʻiliʻi paha me nā palena ʻē aʻe ma ka mana optical i loaʻa. I kēia manawa, nui ka poʻe loea o nā mea hana opio e manaʻolana nui nei e pili ana i nā manaʻolana o APD, a manaʻoʻiʻo lākou he mea pono ka noiʻi ʻana o APD e hoʻoikaika i ka hoʻokūkū honua o nā kahua pili.
2. Ka hoʻomohala ʻenehana omea ʻike kiʻi avalanche(Mea ʻike kiʻi APD)
2.1 Nā Mea Hana
(1)Mea ʻike kiʻi Si
He ʻenehana makua ka ʻenehana mea Si i hoʻohana nui ʻia ma ke kahua o ka microelectronics, akā ʻaʻole kūpono ia no ka hoʻomākaukau ʻana i nā mea hana ma ka pae nalu o 1.31mm a me 1.55mm i ʻae nui ʻia ma ke kahua o ke kamaʻilio optical.
(2)Ge
ʻOiai ke kūpono o ka pane spectral o Ge APD no nā koi o ka pohō haʻahaʻa a me ka hoʻopuehu haʻahaʻa i ka hoʻoili ʻana o ka fiber optical, aia nā pilikia nui i ke kaʻina hana hoʻomākaukau. Eia kekahi, kokoke ka lakio o ka electron a me ka lua ionization o Ge i () 1, no laila he paʻakikī ke hoʻomākaukau i nā mea hana APD hana kiʻekiʻe.
(3)In0.53Ga0.47As/InP
He ala kūpono ia e koho ai iā In0.53Ga0.47As ma ke ʻano he papa omo māmā o APD a me InP ma ke ʻano he papa hoʻonui. ʻO ka piko omo o ka mea In0.53Ga0.47As he 1.65mm, 1.31mm, 1.55mm ka lōʻihi o ka nalu ma kahi o 104cm-1 ka coefficient omo kiʻekiʻe, ʻo ia ka mea makemake nui ʻia no ka papa omo o ka mea ʻike māmā i kēia manawa.
(4)Mea ʻike kiʻi InGaAs/I lokomea ʻike kiʻi
Ma ke koho ʻana iā InGaAsP ma ke ʻano he papa hoʻomoʻa mālamalama a me InP ma ke ʻano he papa hoʻonui, hiki ke hoʻomākaukau ʻia ʻo APD me kahi nalu pane o 1-1.4mm, ka pono quantum kiʻekiʻe, ke au pouli haʻahaʻa a me ka loaʻa avalanche kiʻekiʻe. Ma ke koho ʻana i nā ʻāpana alloy like ʻole, hoʻokō ʻia ka hana maikaʻi loa no nā nalu kikoʻī.
(5)InGaAs/InAlAs
Loaʻa i ka mea In0.52Al0.48As kahi band gap (1.47eV) a ʻaʻole ia e omo i ka pae nalu o 1.55mm. Aia nā hōʻike e hiki i ka papa epitaxial In0.52Al0.48As lahilahi ke loaʻa nā ʻano loaʻa maikaʻi aʻe ma mua o InP ma ke ʻano he papa multiplicator ma lalo o ke kūlana o ka hoʻokomo ʻana o ka electron maʻemaʻe.
(6)InGaAs/InGaAs (P) /InAlAs a me InGaAs/In (Al) GaAs/InAlAs
ʻO ka hopena o ka ionization rate o nā mea he mea nui ia e hoʻopilikia ana i ka hana o APD. Hōʻike nā hopena e hiki ke hoʻomaikaʻi ʻia ka collision ionization rate o ka papa multiplier ma ka hoʻolauna ʻana i nā ʻano InGaAs (P) /InAlAs a me In (Al) GaAs/InAlAs superlattice. Ma ka hoʻohana ʻana i ka ʻano superlattice, hiki i ka ʻenekinia band ke hoʻomalu hana i ka asymmetric band edge discontinuity ma waena o ka conduction band a me nā waiwai valence band, a e hōʻoia i ka nui o ka conduction band discontinuity ma mua o ka valence band discontinuity (ΔEc>>ΔEv). Ke hoʻohālikelike ʻia me nā mea nui InGaAs, ua hoʻonui nui ʻia ka InGaAs/InAlAs quantum well electron ionization rate (a), a loaʻa i nā electrons a me nā lua ka ikehu keu. Ma muli o ΔEc>>ΔEv, hiki ke manaʻo ʻia e hoʻonui ka ikehu i loaʻa e nā electrons i ka electron ionization rate ma mua o ka hāʻawi ʻana o ka ikehu lua i ka lua ionization rate (b). Piʻi ka ratio (k) o ka electron ionization rate i ka lua ionization rate. No laila, hiki ke loaʻa ka huahana loaʻa-bandwidth kiʻekiʻe (GBW) a me ka hana walaʻau haʻahaʻa ma o ka hoʻopili ʻana i nā ʻano superlattice. Eia nō naʻe, ʻo kēia ʻano lua quantum InGaAs/InAlAs APD, hiki ke hoʻonui i ka waiwai k, he paʻakikī ke hoʻopili i nā mea loaʻa optical. ʻO kēia no ka mea ua kaupalena ʻia ka mea hoʻonui e hoʻopilikia i ka pane ʻana kiʻekiʻe loa e ke au pouli, ʻaʻole ka walaʻau hoʻonui. Ma kēia ʻano, ʻo ke au pouli ke kumu nui o ka hopena tunneling o ka papa lua InGaAs me kahi āpau band haiki, no laila ʻo ka hoʻolauna ʻana o kahi alloy quaternary ākea ākea, e like me InGaAsP a i ʻole InAlGaAs, ma kahi o InGaAs ma ke ʻano he papa lua o ka ʻano lua quantum hiki ke kāohi i ke au pouli.
Ka manawa hoʻouna: Nov-13-2023