Abstract: ʻO ke ʻano kumu a me ke kumu hana o ka avalanche photodetector (ʻIke kiʻi APD) ua hoʻolauna ʻia, ʻike ʻia ke kaʻina hana hoʻomohala o ka ʻōnaehana hāmeʻa, hōʻuluʻulu ʻia ke kūlana noiʻi o kēia manawa, a ʻike ʻia ka hoʻomohala ʻana o ka APD e hiki mai ana.
1. Hoʻolauna
ʻO ka mea nānā kiʻi kiʻi kahi mea e hoʻololi i nā hōʻailona māmā i nā hōʻailona uila.Ma kahisemiconductor photodetector, ka mea lawe kiʻi i hoʻoulu ʻia e ka photon i hana ʻia e komo i ke kaapuni waho ma lalo o ka volta bias i hoʻopili ʻia a hana i kahi kiʻi kiʻi hiki ke ana.ʻOiai ma ka pane kiʻekiʻe loa, hiki i kahi kiʻi kiʻi PIN ke hana i nā pālua electron-hole i ka hapa nui loa, ʻo ia kahi mea me ka loaʻa ʻole o ka waiwai kūloko.No ka pane ʻoi aku, hiki ke hoʻohana ʻia kahi avalanche photodiode (APD).Hoʻokumu ʻia ka hopena amplification o APD ma ka photocurrent i ka hopena hoʻoheheʻe ionization.Ma lalo o kekahi mau kūlana, hiki i nā electrons accelerated a me nā puka ke loaʻa i ka ikehu e hoʻokūkū ai me ka lattice e hana i kahi pālua hou o nā lua electron-hole.ʻO kēia kaʻina hana he kaulahao kaulahao, i hiki ai i nā pālua electron-hole i hana ʻia e ka absorption māmā ke hana i kahi helu nui o nā lua electron-hole a hana i kahi photocurrent lua nui.No laila, loaʻa i ka APD ka pane kiʻekiʻe a me ka loaʻa o loko, kahi e hoʻomaikaʻi ai i ka ratio signal-to-noise o ka hāmeʻa.E hoʻohana nui ʻia ka APD ma nā ʻōnaehana kamaʻilio fiber optical lōʻihi a liʻiliʻi me nā palena ʻē aʻe i ka mana optical i loaʻa.I kēia manawa, nui ka manaʻo o ka poʻe loea optical e pili ana i ka manaʻo o APD, a manaʻoʻiʻo he pono ka noiʻi ʻana o APD e hoʻonui i ka hoʻokūkū honua o nā kahua pili.
2. Hoʻomohala ʻenehana oʻike kiʻi avalanche(Ka mea nānā kiʻi APD)
2.1 Mea Hana
(1)ʻO ka mea nānā kiʻi
ʻO ka ʻenehana waiwai ʻo Si he ʻenehana makua i hoʻohana nui ʻia ma ke kahua o ka microelectronics, akā ʻaʻole kūpono ia no ka hoʻomākaukau ʻana i nā hāmeʻa i ka laulā hawewe o 1.31mm a me 1.55mm i ʻae ʻia ma ke kahua o ka kamaʻilio optical.
(2)Ge
ʻOiai kūpono ka pane spectral o Ge APD no nā koi o ka haʻahaʻa haʻahaʻa a me ka haʻahaʻa haʻahaʻa i ka lawe ʻana i ka fiber optical, aia nā pilikia nui i ka hana hoʻomākaukau.Eia hou, kokoke loa ka lakio electron a me ka hole ionization rate o Ge i () 1, no laila paʻakikī ke hoʻomākaukau i nā mea hana kiʻekiʻe APD.
(3)In0.53Ga0.47As/InP
He ala kūpono ia e koho ai i ka In0.53Ga0.47As ma ke ʻano he papa hoʻoheheʻe māmā o APD a me InP ma ke ʻano he multiplier layer.ʻO ke kiʻekiʻe absorption o In0.53Ga0.47As mea he 1.65mm, 1.31mm, 1.55mm hawewe lōʻihi ma kahi o 104cm-1 kiʻekiʻe absorption coefficient, ʻo ia ka mea i makemake ʻia no ka papa absorption o ka mea ʻike kukui i kēia manawa.
(4)ʻO InGaAs photodetector/Mamea nānā kiʻi
Ma ke koho ʻana i ka InGaAsP ma ke ʻano he papa hoʻoheheʻe kukui a me ka InP ma ke ʻano he multiplier layer, hiki ke hoʻomākaukau ʻia ka APD me ka lōʻihi hawewe pane o 1-1.4mm, kiʻekiʻe quantum efficiency, haʻahaʻa pōʻeleʻele a me ka loaʻa avalanche kiʻekiʻe.Ma ke koho ʻana i nā ʻāpana alloy like ʻole, loaʻa ka hana maikaʻi loa no nā lōʻihi nalu kikoʻī.
(5)InGaAs/InAlAs
In0.52Al0.48As mea i loaʻa i kahi āwaha band (1.47eV) a ʻaʻole e komo ma ka laulā hawewe o 1.55mm.Aia nā hōʻike e hiki ke loaʻa i ka papa epitaxial lahilahi In0.52Al0.48As ka loaʻa ʻana o nā hiʻohiʻona maikaʻi aʻe ma mua o ka InP ma ke ʻano he multiplicator layer ma lalo o ke ʻano o ka injection electron maʻemaʻe.
(6)InGaAs/InGaAs (P) /InAlAs a me InGaAs/In (Al) GaAs/InAlAs
He mea koʻikoʻi ka hopena o ka ionization rate o nā mea i ka hana o APD.Hōʻike nā hualoaʻa e hiki ke hoʻomaikaʻi ʻia ka nui o ka ionization collision o ka papa multiplier ma ka hoʻokomo ʻana i nā hale kiʻekiʻe InGaAs (P) /InAlAs a me In (Al) GaAs/InAlAs.Ma ka hoʻohana ʻana i ke ʻano superlattice, hiki i ka ʻenekinia band ke hoʻomalu i ka ʻoki ʻana o ka ʻaoʻao asymmetric ma waena o ka band conduction a me nā koina valence band, a e hōʻoia i ka ʻoi aku o ka hoʻopau ʻana o ka band conduction ma mua o ka discontinuity band valence (ΔEc>>ΔEv).Hoʻohālikelike ʻia me nā mea nui InGaAs, InGaAs/InAlAs quantum well electron ionization rate (a) i hoʻonui nui ʻia, a loaʻa nā electrons a me nā lua i ka ikehu hou.Ma muli o ka ΔEc >> ΔEv, hiki ke manaʻo ʻia ʻo ka ikehu i loaʻa e nā electrons e hoʻonui i ka nui o ka ionization electron ma mua o ka hāʻawi ʻana o ka ikehu puka i ka helu ionization hole (b).Hoʻonui ka lakio (k) o ka nui o ka ionization electron i ka hole ionization rate.No laila, hiki ke loaʻa ka huahana kiʻekiʻe-bandwidth (GBW) a me ka haʻahaʻa haʻahaʻa haʻahaʻa ma ke kau ʻana i nā hale superlattice.Eia naʻe, ʻo kēia InGaAs/InAlAs quantum well structure APD, hiki ke hoʻonui i ka waiwai k, paʻakikī ke hoʻopili i nā mea hoʻokipa optical.ʻO kēia no ka mea ʻo ka mea hoʻonui e pili ana i ka pane kiʻekiʻe e kaupalena ʻia e ke au ʻeleʻele, ʻaʻole ka leo multiplier.I loko o kēia hoʻolālā, ʻo ke ʻano pōʻeleʻele ke kumu nui ma muli o ka hopena tunneling o ka papawai InGaAs me kahi ʻāpana haiki liʻiliʻi, no laila ka hoʻokomo ʻana i kahi huila quaternary ākea ākea, e like me InGaAsP a i ʻole InAlGaAs, ma kahi o InGaAs ma ke ʻano he punawai. Hiki i ka luawai quantum ke ho'opau i ke au 'ele'ele.
Ka manawa hoʻouna: Nov-13-2023