No ke aha mākou e hoʻohana ai iā Ge ma ke ʻano he photodetector

No ke aha mākou e hoʻohana ai iā Ge ma ke ʻano hemea ʻike kiʻi
1, Ke kūlana kumu: No ke aha he mea pono e hoʻohana iā Ge ma ke ʻano he photodetector
I loko o nā loulou optical silicon, ʻo ka photodetector nā "mea unuhi" e hoʻololi i nā hōʻailona optical i nā hōʻailona uila. Eia nō naʻe, ʻo ka silicon ponoʻī he bandgap o 1.12 eV a kokoke i ka moakāka i nā kāʻei kamaʻilio 1310/1550 nm, no laila ʻo germanium (Ge) wale nō ke hoʻokomo ʻia.
He 0.8 eV ka bandgap pololei o Ge, kahi e uhi ana i ke kāʻei kamaʻilio O/C, akā he 4.2% lattice mismatch me ka silicon. ʻO ke kiʻekiʻe o ka dislocation density no ka ulu pololei he 4 × 10⁸cm⁻², a ʻaʻole loaʻa loa ke au pouli; I ka manawa like, he bandgap pololei ʻole ko Ge, a ʻo kona coefficient absorption he hoʻokahi kauoha o ka nui haʻahaʻa ma mua o InGaAs, he nāwaliwali maoli ia.
2, Ka holomua nui: ua uhaʻi ka hoʻohui ʻana o ka waveguide i ka bottleneck hana
ʻO ke ala "lōʻihi omo = ala hōʻiliʻili mea lawe" o nā mea ʻike kiʻi hanana kū pololei kuʻuna he seesaw "bandwidth pane", me ka palena kiʻekiʻe o 7GHz wale nō;
I kēia manawa, ua māhele ʻia nā mīkini hoʻololi maʻamau i ʻekolu mau pūʻulu:
Pine kū pololei: ʻO ke kaʻina hana ka mea maʻalahi a me ke ʻano nui i ka ʻoihana, e hoʻokō ana i ka 40Gb/s @ zero bias a me ka bandwidth>60GHz;
MSM Metal Semiconductor Metal: ʻAʻohe pono no ka doping wela kiʻekiʻe, hiki ke hoʻohui ʻia i loko o ka backend, he kiʻekiʻe ke au pōʻeleʻele, a me ka bandwidth ma luna o 40GHz;
Nā ʻano kiʻekiʻe:Nā mea ʻike kiʻi nalu huakaʻi(TWPD) a me nā photodetectors lawe laina hoʻokahi (UTC) hoʻohana ʻia no nā loulou photon microwave, ke kaulike nei i ka bandwidth kiʻekiʻe a me ke kiʻi photocurrent saturation kiʻekiʻe.
3. Nā Mea Hana a me ke Hana Lima: Hoʻololi i nā 'Kīnā' i nā Pōmaikaʻi
I ka pane ʻana i ka mismatch lattice a me nā hemahema hana, ua hoʻomohala ka ʻoihana i nā hoʻonā makua:
ʻElua ʻanuʻu epitaxy: ʻo ka mua, ua ulu ʻia kahi papa buffer haʻahaʻa o 30-50nm, a laila hoʻonui ʻia ka mahana e hiki ai i ka mānoanoa i makemake ʻia, e hoʻemi ana i ka dislocation density i ~ 10 ⁷ cm ⁻ ²;
ʻEnekinia hoʻopaʻa: ʻO ka ʻokoʻa o nā coefficients hoʻonui wela ma waena o Ge a me Si e hana i kahi 0.2% biaxial tensile strain i loko o ke kiʻiʻoniʻoni Ge, e hopena ana i ka hōʻemi pololei ʻana o ka band gap mai 0.8 eV a i 0.77 eV a me ka hoʻonui ʻana o ka lihi absorption mai 1.55 μm a i 1.61 μm, e uhi ana i ka C+L band holoʻokoʻa, a hiki i ka absorption coefficient i loko o ka L band ke hoʻohālikelike me InGaAs;
Hoʻohui ʻana o CMOS: Aia nō ia i ke kahua noiʻi. Pono ka hoʻohui ʻana o ka hopena mua (FEOL) e kū i nā mahana kiʻekiʻe ma luna o 750 ℃, ʻoiai ʻo ka hoʻohui ʻana o ka hopena hope (BEOL) he aloha i ka mahana akā me ka ʻole o nā substrates kristal, a ʻaʻole i hoʻokumu i kahi hopena makua i hoʻokahi. I kēia manawa, hoʻohana ka ʻoihana i kahi ala hui o "90% single-chip + externallaser".